Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 |
| Publikationsstatus | Veröffentlicht - 2010 |
| Veranstaltung | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 - Bordeaux, Frankreich Dauer: 26 Apr. 2010 → 28 Apr. 2010 |
Publikationsreihe
| Name | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 |
|---|
Abstract
An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Theoretische Informatik und Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Mathematik (insg.)
- Theoretische Informatik
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- BibTex
- RIS
2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010. 2010. 5464542 (2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Exemplified calculation of stress migration in a 90nm node via structure
AU - Weide-Zaage, Kirsten
N1 - Copyright: Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.
AB - An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.
UR - http://www.scopus.com/inward/record.url?scp=77953700601&partnerID=8YFLogxK
U2 - 10.1109/ESIME.2010.5464542
DO - 10.1109/ESIME.2010.5464542
M3 - Conference contribution
AN - SCOPUS:77953700601
SN - 9781424470266
T3 - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
BT - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
T2 - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
Y2 - 26 April 2010 through 28 April 2010
ER -