Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 288-292 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 6 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Feb. 2000 |
| Veranstaltung | 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Kanada Dauer: 1 Aug. 1999 → 6 Aug. 1999 |
Abstract
The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρxx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρxx totally disappears when the parallel field component is perpendicular to the Hall bar.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 6, Nr. 1, 02.2000, S. 288-292.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure
T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)
AU - Zeitler, U.
AU - Schumacher, H. W.
AU - Regul, J.
AU - Haug, R. J.
AU - Weitz, P.
AU - Jansen, A. G.M.
AU - Schäffler, F.
N1 - Funding information: This work has been supported by the TMR Programme of the European Union under contract no. ERBFMGECT950077.
PY - 2000/2
Y1 - 2000/2
N2 - The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρxx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρxx totally disappears when the parallel field component is perpendicular to the Hall bar.
AB - The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρxx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρxx totally disappears when the parallel field component is perpendicular to the Hall bar.
UR - http://www.scopus.com/inward/record.url?scp=0034139146&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(99)00156-3
DO - 10.1016/S1386-9477(99)00156-3
M3 - Conference article
AN - SCOPUS:0034139146
VL - 6
SP - 288
EP - 292
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
Y2 - 1 August 1999 through 6 August 1999
ER -