Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Forschungsinstitut der Deutschen Bundespost
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1294-1302
Seitenumfang9
FachzeitschriftPhysical Review B
Jahrgang37
Ausgabenummer3
PublikationsstatusVeröffentlicht - 1 Jan. 1988
Extern publiziertJa

Abstract

The spin splitting in a GaAs-GaxAl1-xAs heterojunction has been studied by using the coincidence technique, where the Shubnikov de Haas oscillations of the conductivity are measured in tilted magnetic fields, and by measurements of the activation energy associated with spin-split conductivity minima. The spin splitting is found to be very strongly enhanced by exchange interactions, and values for the effective g factor as high as 6.2 have been found. The coincidence measurements were made at 0.37 K, and required the use of tilt angles in the range 85°89°. These show evidence of oscillatory spin splitting determined by the relative spin-population difference within the Landau levels. The activation energy was also studied as a function of tilt angle, and shows that the spin splitting is primarily determined by the perpendicular component of magnetic field for well-resolved levels. The dependence upon total field is sublinear and shows a saturation behavior at high tilt angles.

ASJC Scopus Sachgebiete

Zitieren

Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction. / Nicholas, R. J.; Haug, R. J.; Klitzing, K. V. et al.
in: Physical Review B, Jahrgang 37, Nr. 3, 01.01.1988, S. 1294-1302.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Nicholas RJ, Haug RJ, Klitzing KV, Weimann G. Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction. Physical Review B. 1988 Jan 1;37(3):1294-1302. doi: 10.1103/PhysRevB.37.1294
Nicholas, R. J. ; Haug, R. J. ; Klitzing, K. V. et al. / Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction. in: Physical Review B. 1988 ; Jahrgang 37, Nr. 3. S. 1294-1302.
Download
@article{d653cd3d2fc6401fb2540c7ea5449341,
title = "Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction",
abstract = "The spin splitting in a GaAs-GaxAl1-xAs heterojunction has been studied by using the coincidence technique, where the Shubnikov de Haas oscillations of the conductivity are measured in tilted magnetic fields, and by measurements of the activation energy associated with spin-split conductivity minima. The spin splitting is found to be very strongly enhanced by exchange interactions, and values for the effective g factor as high as 6.2 have been found. The coincidence measurements were made at 0.37 K, and required the use of tilt angles in the range 85°89°. These show evidence of oscillatory spin splitting determined by the relative spin-population difference within the Landau levels. The activation energy was also studied as a function of tilt angle, and shows that the spin splitting is primarily determined by the perpendicular component of magnetic field for well-resolved levels. The dependence upon total field is sublinear and shows a saturation behavior at high tilt angles.",
author = "Nicholas, {R. J.} and Haug, {R. J.} and Klitzing, {K. V.} and G. Weimann",
year = "1988",
month = jan,
day = "1",
doi = "10.1103/PhysRevB.37.1294",
language = "English",
volume = "37",
pages = "1294--1302",
journal = "Physical Review B",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "3",

}

Download

TY - JOUR

T1 - Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction

AU - Nicholas, R. J.

AU - Haug, R. J.

AU - Klitzing, K. V.

AU - Weimann, G.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The spin splitting in a GaAs-GaxAl1-xAs heterojunction has been studied by using the coincidence technique, where the Shubnikov de Haas oscillations of the conductivity are measured in tilted magnetic fields, and by measurements of the activation energy associated with spin-split conductivity minima. The spin splitting is found to be very strongly enhanced by exchange interactions, and values for the effective g factor as high as 6.2 have been found. The coincidence measurements were made at 0.37 K, and required the use of tilt angles in the range 85°89°. These show evidence of oscillatory spin splitting determined by the relative spin-population difference within the Landau levels. The activation energy was also studied as a function of tilt angle, and shows that the spin splitting is primarily determined by the perpendicular component of magnetic field for well-resolved levels. The dependence upon total field is sublinear and shows a saturation behavior at high tilt angles.

AB - The spin splitting in a GaAs-GaxAl1-xAs heterojunction has been studied by using the coincidence technique, where the Shubnikov de Haas oscillations of the conductivity are measured in tilted magnetic fields, and by measurements of the activation energy associated with spin-split conductivity minima. The spin splitting is found to be very strongly enhanced by exchange interactions, and values for the effective g factor as high as 6.2 have been found. The coincidence measurements were made at 0.37 K, and required the use of tilt angles in the range 85°89°. These show evidence of oscillatory spin splitting determined by the relative spin-population difference within the Landau levels. The activation energy was also studied as a function of tilt angle, and shows that the spin splitting is primarily determined by the perpendicular component of magnetic field for well-resolved levels. The dependence upon total field is sublinear and shows a saturation behavior at high tilt angles.

UR - http://www.scopus.com/inward/record.url?scp=0002546651&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.37.1294

DO - 10.1103/PhysRevB.37.1294

M3 - Article

AN - SCOPUS:0002546651

VL - 37

SP - 1294

EP - 1302

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 3

ER -

Von denselben Autoren