Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Bohayra Mortazavi
  • Brahmanandam Javvaji
  • Fazel Shojaei
  • Timon Rabczuk
  • Alexander V. Shapeev
  • Xiaoying Zhuang

Externe Organisationen

  • Persian Gulf University
  • Tongji University
  • Skolkovo Institute of Science and Technology
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Details

OriginalspracheEnglisch
Aufsatznummer105716
Seitenumfang1
FachzeitschriftNANO ENERGY
Jahrgang82
Frühes Online-Datum29 Dez. 2020
PublikationsstatusVeröffentlicht - Apr. 2021

Abstract

Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

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Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles. / Mortazavi, Bohayra; Javvaji, Brahmanandam; Shojaei, Fazel et al.
in: NANO ENERGY, Jahrgang 82, 105716, 04.2021.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Mortazavi B, Javvaji B, Shojaei F, Rabczuk T, Shapeev AV, Zhuang X. Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles. NANO ENERGY. 2021 Apr;82:105716. Epub 2020 Dez 29. doi: 10.1016/j.nanoen.2020.105716
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title = "Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles",
abstract = "Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.",
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author = "Bohayra Mortazavi and Brahmanandam Javvaji and Fazel Shojaei and Timon Rabczuk and Shapeev, {Alexander V.} and Xiaoying Zhuang",
note = "Funding Information: B.M. and X.Z. appreciate the funding by the Deutsche Forschungsgemeinschaft, Germany (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453 ). B.J. and X.Z. gratefully acknowledge the sponsorship from the ERC, Germany Starting Grant COTOFLEXI (No. 802205 ). Authors also acknowledge the support of the cluster system team at the Leibniz Universit{\"a}t of Hannover, Germany . B. M and T. R. are greatly thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources. A.V.S. is supported by RFBR, Russia grant number 20-53-12012 . F.S. thanks the Persian Gulf University Research Council, Iran for support of this study. Funding Information: B.M. and X.Z. appreciate the funding by the Deutsche Forschungsgemeinschaft, Germany (DFG, German Research Foundation) under Germany's Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). B.J. and X.Z. gratefully acknowledge the sponsorship from the ERC, Germany Starting Grant COTOFLEXI (No. 802205). Authors also acknowledge the support of the cluster system team at the Leibniz Universit?t of Hannover, Germany. B. M and T. R. are greatly thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources. A.V.S. is supported by RFBR, Russia grant number 20-53-12012. F.S. thanks the Persian Gulf University Research Council, Iran for support of this study.",
year = "2021",
month = apr,
doi = "10.1016/j.nanoen.2020.105716",
language = "English",
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journal = "NANO ENERGY",
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TY - JOUR

T1 - Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

AU - Mortazavi, Bohayra

AU - Javvaji, Brahmanandam

AU - Shojaei, Fazel

AU - Rabczuk, Timon

AU - Shapeev, Alexander V.

AU - Zhuang, Xiaoying

N1 - Funding Information: B.M. and X.Z. appreciate the funding by the Deutsche Forschungsgemeinschaft, Germany (DFG, German Research Foundation) under Germany’s Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453 ). B.J. and X.Z. gratefully acknowledge the sponsorship from the ERC, Germany Starting Grant COTOFLEXI (No. 802205 ). Authors also acknowledge the support of the cluster system team at the Leibniz Universität of Hannover, Germany . B. M and T. R. are greatly thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources. A.V.S. is supported by RFBR, Russia grant number 20-53-12012 . F.S. thanks the Persian Gulf University Research Council, Iran for support of this study. Funding Information: B.M. and X.Z. appreciate the funding by the Deutsche Forschungsgemeinschaft, Germany (DFG, German Research Foundation) under Germany's Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). B.J. and X.Z. gratefully acknowledge the sponsorship from the ERC, Germany Starting Grant COTOFLEXI (No. 802205). Authors also acknowledge the support of the cluster system team at the Leibniz Universit?t of Hannover, Germany. B. M and T. R. are greatly thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources. A.V.S. is supported by RFBR, Russia grant number 20-53-12012. F.S. thanks the Persian Gulf University Research Council, Iran for support of this study.

PY - 2021/4

Y1 - 2021/4

N2 - Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

AB - Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

KW - 2D Materials

KW - Electronic

KW - Mechanical

KW - MoSiN

KW - Piezoelectric

KW - Thermal conductivity

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