Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 221-224 |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781509027248 |
| Publikationsstatus | Veröffentlicht - 18 Nov. 2016 |
| Veranstaltung | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, USA / Vereinigte Staaten Dauer: 5 Juni 2016 → 10 Juni 2016 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| Band | 2016-November |
| ISSN (Print) | 0160-8371 |
Abstract
Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
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2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. S. 221-224 7749582 (Conference Record of the IEEE Photovoltaic Specialists Conference; Band 2016-November).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Evolution of oxide disruptions
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
AU - Tetzlaff, Dominic
AU - Krugener, Jan
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Hohne, Uwe
AU - Kahler, Jan Dirk
AU - Wietler, Tobias
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
AB - Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
KW - junction formation
KW - passivating contacts
KW - pinholes
KW - polysilicon
KW - silicon
KW - silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=85003571528&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2016.7749582
DO - 10.1109/pvsc.2016.7749582
M3 - Conference contribution
AN - SCOPUS:85003571528
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 221
EP - 224
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2016 through 10 June 2016
ER -