Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 963-965 |
| Seitenumfang | 3 |
| ISBN (elektronisch) | 9781509056057 |
| Publikationsstatus | Veröffentlicht - 2017 |
| Veranstaltung | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, USA / Vereinigte Staaten Dauer: 25 Juni 2017 → 30 Juni 2017 |
Abstract
Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
Ziele für nachhaltige Entwicklung
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2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. S. 963-965.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Evolution of oxide disruptions
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
AU - Tetzlaff, Dominic
AU - Krugener, Jan
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Hohne, Uwe
AU - Kahler, Jan Dirk
AU - Wietler, Tobias
N1 - Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325702B.
PY - 2017
Y1 - 2017
N2 - Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
AB - Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
KW - Junction formation
KW - Passivating contacts
KW - Pinholes
KW - Polysilicon
KW - Silicon
KW - Silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=85048510383&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2017.8366522
DO - 10.1109/pvsc.2017.8366522
M3 - Conference contribution
AN - SCOPUS:85048510383
SP - 963
EP - 965
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 June 2017 through 30 June 2017
ER -