TY - JOUR

T1 - Evolution of arsenic in high fluence plasma immersion ion implanted silicon

T2 - Behavior of the as-implanted surface

AU - Vishwanath, V.

AU - Demenev, E.

AU - Giubertoni, D.

AU - Vanzetti, L.

AU - Koh, A. L.

AU - Steinhauser, G.

AU - Pepponi, G.

AU - Bersani, M.

AU - Meirer, F.

AU - Foad, M. A.

N1 - Funding Information: We thank Matthew Castle and Martin Hilkene for their assistance with performing the arsenic PIII. The activity of FM was supported by the Autonomous Province of Trento under the framework of the DART project, Marie Curie – COFUND Program. X-Ray absorption measurements were carried out at the Stanford Synchrotron Radiation Lightsource (SSRL), a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences.

PY - 2015/11/15

Y1 - 2015/11/15

N2 - High fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

AB - High fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

KW - Arsenic

KW - Arsenic implantation

KW - As-implanted silicon

KW - Enhanced oxidation

KW - Plasma immersion ion implantation (PIII)

UR - http://www.scopus.com/inward/record.url?scp=84944339037&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2015.07.068

DO - 10.1016/j.apsusc.2015.07.068

M3 - Article

AN - SCOPUS:84944339037

VL - 355

SP - 792

EP - 799

JO - Applied surface science

JF - Applied surface science

SN - 0169-4332

ER -