Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Susanne Richter
  • Yevgeniya Larionova
  • Stephan Großer
  • Matthias Menzel
  • Henning Schulte-Huxel
  • Robby Peibst
  • Rolf Brendel
  • Christian Hagendorf

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Fraunhofer-Center für Silizium-Photovoltaik (CSP)
  • Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
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Details

OriginalspracheEnglisch
Titel des SammelwerksSiliconPV 2019
Untertitel9th International Conference on Crystalline Silicon Photovoltaics
Herausgeber (Verlag)AIP Publishing LLC
ISBN (elektronisch)9780735418929
PublikationsstatusVeröffentlicht - 27 Aug. 2019
Veranstaltung9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 - Leuven, Belgien
Dauer: 8 Apr. 201910 Apr. 2019

Publikationsreihe

NameAIP Conference Proceedings
Nummer1
Band2147
ISSN (Print)0094-243X
ISSN (elektronisch)1551-7616

Abstract

Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.

ASJC Scopus Sachgebiete

Zitieren

Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM. / Richter, Susanne; Larionova, Yevgeniya; Großer, Stephan et al.
SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing LLC, 2019. 040017 (AIP Conference Proceedings; Band 2147, Nr. 1).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Richter, S, Larionova, Y, Großer, S, Menzel, M, Schulte-Huxel, H, Peibst, R, Brendel, R & Hagendorf, C 2019, Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM. in SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics., 040017, AIP Conference Proceedings, Nr. 1, Bd. 2147, AIP Publishing LLC, 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019, Leuven, Belgien, 8 Apr. 2019. https://doi.org/10.1063/1.5123844
Richter, S., Larionova, Y., Großer, S., Menzel, M., Schulte-Huxel, H., Peibst, R., Brendel, R., & Hagendorf, C. (2019). Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM. In SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics Artikel 040017 (AIP Conference Proceedings; Band 2147, Nr. 1). AIP Publishing LLC. https://doi.org/10.1063/1.5123844
Richter S, Larionova Y, Großer S, Menzel M, Schulte-Huxel H, Peibst R et al. Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM. in SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing LLC. 2019. 040017. (AIP Conference Proceedings; 1). doi: 10.1063/1.5123844
Richter, Susanne ; Larionova, Yevgeniya ; Großer, Stephan et al. / Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM. SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing LLC, 2019. (AIP Conference Proceedings; 1).
Download
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AU - Larionova, Yevgeniya

AU - Großer, Stephan

AU - Menzel, Matthias

AU - Schulte-Huxel, Henning

AU - Peibst, Robby

AU - Brendel, Rolf

AU - Hagendorf, Christian

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N2 - Carrier selective contacts are of growing interest in the development and optimization of high efficiency silicon solar cell concepts. In particular, the passivation mechanism of ultra-thin oxide layers in interaction with poly-Si layers came into focus and the origin of tunnel currents and the so called pinhole conductivity is discussed. Many process parameters and their influence on the passivation effect are not clear, yet. The present study investigates the electrical properties in Si/SiOx/poly-Si layer system from different processes. For this purpose, high-resolution electrical evaluation of the current path density through the interfacial oxide is investigated by conductive AFM using a newly developed image calculation software tool to determine the vertical current path density. We compared two thicknesses of poly-Si (n+ PECVD) layers each at optimum annealing temperature (corresponding to highest i-VOC). The influence of three annealing temperatures (at optimum passivation, below and above) is investigated for an ozone oxide and pinhole densities are analyzed by the TMAH method. Finally, the optimum properties of the layer stack for three interfacial oxides (each at optimum passivation) are studied.

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