Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 866-868 |
| Seitenumfang | 3 |
| Fachzeitschrift | Materials letters |
| Jahrgang | 64 |
| Ausgabenummer | 7 |
| Frühes Online-Datum | 20 Jan. 2010 |
| Publikationsstatus | Veröffentlicht - 15 Apr. 2010 |
Abstract
New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
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- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: Materials letters, Jahrgang 64, Nr. 7, 15.04.2010, S. 866-868.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Epitaxial multi-component rare-earth oxide
T2 - A high-k material with ultralow mismatch to Si
AU - Wang, Jinxing
AU - Liu, Tianmo
AU - Wang, Zhongchang
AU - Bugiel, Eberhard
AU - Laha, Apurba
AU - Watahiki, Tatsuro
AU - Shayduk, Roman
AU - Braun, Wolfgang
AU - Fissel, Andreas
AU - Osten, Hans Jörg
N1 - Funding Information: This work was supported in part by the German Federal Ministry of Education and Research under the MEGAEPOS project. J. Wang acknowledges the Chinese Scholarship Council project for scholarship support ( LJC20093012 ).
PY - 2010/4/15
Y1 - 2010/4/15
N2 - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
AB - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
KW - Crystal growth
KW - Electronic materials
KW - Nanomaterials
KW - Thin films
KW - X-ray techniques
UR - http://www.scopus.com/inward/record.url?scp=76849112128&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2010.01.045
DO - 10.1016/j.matlet.2010.01.045
M3 - Article
AN - SCOPUS:76849112128
VL - 64
SP - 866
EP - 868
JO - Materials letters
JF - Materials letters
SN - 0167-577X
IS - 7
ER -