Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 991-994 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 41 |
| Ausgabenummer | 7 |
| Frühes Online-Datum | 17 Juli 2001 |
| Publikationsstatus | Veröffentlicht - Juli 2001 |
| Extern publiziert | Ja |
Abstract
We show the first results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with very promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial growth phase was studied using scanning tunneling microscopy. On Si(0 0 1) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon. Finally, we show that the structural quality of epitaxial grown Pr2O3 on Si(0 0 1) degrades when the film is exposed to air due to silicon oxide formation at the interface based on oxygen indiffusion. However, it can be stabilized by capping with Si.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 41, Nr. 7, 07.2001, S. 991-994.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Epitaxial, high-K dielectrics on silicon
T2 - The example of praseodymium oxide
AU - Osten, H. J.
AU - Liu, J. P.
AU - Müssig, H. J.
AU - Zaumseil, P.
PY - 2001/7
Y1 - 2001/7
N2 - We show the first results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with very promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial growth phase was studied using scanning tunneling microscopy. On Si(0 0 1) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon. Finally, we show that the structural quality of epitaxial grown Pr2O3 on Si(0 0 1) degrades when the film is exposed to air due to silicon oxide formation at the interface based on oxygen indiffusion. However, it can be stabilized by capping with Si.
AB - We show the first results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with very promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial growth phase was studied using scanning tunneling microscopy. On Si(0 0 1) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon. Finally, we show that the structural quality of epitaxial grown Pr2O3 on Si(0 0 1) degrades when the film is exposed to air due to silicon oxide formation at the interface based on oxygen indiffusion. However, it can be stabilized by capping with Si.
UR - http://www.scopus.com/inward/record.url?scp=0035394782&partnerID=8YFLogxK
U2 - 10.1016/S0026-2714(01)00054-3
DO - 10.1016/S0026-2714(01)00054-3
M3 - Article
AN - SCOPUS:0035394782
VL - 41
SP - 991
EP - 994
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 7
ER -