Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes |
| Herausgeber/-innen | J. Osvald, S. Hascik, J. Osvald, S. Hascik |
| Seiten | 155-162 |
| Seitenumfang | 8 |
| Publikationsstatus | Veröffentlicht - 2004 |
| Veranstaltung | ASDAM 2004 - 5th International Conference on Semiconductor Devices and Microsystmes - Smolenics Castle, Slowakei Dauer: 17 Okt. 2004 → 21 Okt. 2004 |
Publikationsreihe
| Name | ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes |
|---|
Abstract
Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternatives dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
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ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes. Hrsg. / J. Osvald; S. Hascik; J. Osvald; S. Hascik. 2004. S. 155-162 (ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Epitaxial high-κ dielectrics on silicon
AU - Osten, H. Jörg
PY - 2004
Y1 - 2004
N2 - Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternatives dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
AB - Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternatives dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
UR - http://www.scopus.com/inward/record.url?scp=28844441956&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:28844441956
SN - 0780385357
SN - 9780780385351
T3 - ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes
SP - 155
EP - 162
BT - ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes
A2 - Osvald, J.
A2 - Hascik, S.
A2 - Osvald, J.
A2 - Hascik, S.
T2 - ASDAM 2004 - 5th International Conference on Semiconductor Devices and Microsystmes
Y2 - 17 October 2004 through 21 October 2004
ER -