Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 523-526 |
| Seitenumfang | 4 |
| Fachzeitschrift | VACUUM |
| Jahrgang | 85 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 21 Okt. 2010 |
Abstract
In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Instrumentierung
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: VACUUM, Jahrgang 85, Nr. 4, 21.10.2010, S. 523-526.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
AU - Dargis, R.
AU - Fissel, A.
AU - Schwendt, D.
AU - Bugiel, E.
AU - Krügener, J.
AU - Wietler, T.
AU - Laha, A.
AU - Osten, H. J.
PY - 2010/10/21
Y1 - 2010/10/21
N2 - In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
AB - In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
KW - Molecular beam epitaxy
KW - Rare-earth oxide
KW - Silicon-on-insulator
UR - http://www.scopus.com/inward/record.url?scp=78649644175&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2010.01.026
DO - 10.1016/j.vacuum.2010.01.026
M3 - Article
AN - SCOPUS:78649644175
VL - 85
SP - 523
EP - 526
JO - VACUUM
JF - VACUUM
SN - 0042-207X
IS - 4
ER -