Epitaxial Gd2O3 on strained Si1-xGe x layers for next generation complementary metal oxide semiconductor device application

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Kankat Ghosh
  • Sudipta Das
  • A. Fissel
  • H. J. Osten
  • Apurba Laha

Organisationseinheiten

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
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Details

OriginalspracheEnglisch
Aufsatznummer153501
FachzeitschriftApplied physics letters
Jahrgang103
Ausgabenummer15
PublikationsstatusVeröffentlicht - 7 Okt. 2013

Abstract

Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si 1-xGex layers using same technique. Pt/Gd 2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd 2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ∼1011 cm-2 eV-1.

ASJC Scopus Sachgebiete

Zitieren

Epitaxial Gd2O3 on strained Si1-xGe x layers for next generation complementary metal oxide semiconductor device application. / Ghosh, Kankat; Das, Sudipta; Fissel, A. et al.
in: Applied physics letters, Jahrgang 103, Nr. 15, 153501, 07.10.2013.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Ghosh K, Das S, Fissel A, Osten HJ, Laha A. Epitaxial Gd2O3 on strained Si1-xGe x layers for next generation complementary metal oxide semiconductor device application. Applied physics letters. 2013 Okt 7;103(15):153501. doi: 10.1063/1.4824422
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abstract = "Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si 1-xGex layers using same technique. Pt/Gd 2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd 2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ∼1011 cm-2 eV-1.",
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AU - Ghosh, Kankat

AU - Das, Sudipta

AU - Fissel, A.

AU - Osten, H. J.

AU - Laha, Apurba

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