TY - JOUR

T1 - Epi-GdO-MOSHEMT

T2 - A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT with Improved ION/IOFFOperating at 473 K

AU - Sarkar, Ritam

AU - Upadhyay, Bhanu B.

AU - Bhunia, Swagata

AU - Pokharia, Ravindra S.

AU - Nag, Dhiman

AU - Surapaneni, S.

AU - Lemettinen, Jori

AU - Suihkonen, Sami

AU - Gribisch, Philipp

AU - Osten, Hans Jorg

AU - Ganguly, Swaroop

AU - Saha, Dipankar

AU - Laha, Apurba

N1 - Funding Information: Ritam Sarkar, Philipp Gribisch, Hans-Jörg Osten, and Apurba Laha would like to thank the Department of Science and Technology (DST), Government of India, and German Academic Exchange Service (DAAD) for their financial support to establish the international collaboration; Apurba Laha and Ritam Sarkar also like to thank the Ministry of Electronics and Information Technology, Government of India, for their financial support in establishing the PA-MBE facilities at IIT-Bombay; and Philipp Gribisch also like to acknowledge the Minna-James-Heineman foundation for a scholarship. Funding Information: Manuscript received February 3, 2021; revised March 22, 2021; accepted March 26, 2021. Date of publication April 22, 2021; date of current version May 21, 2021. The work of Ritam Sarkar was supported in part by the Department of Science and Technology (DST), Government of India, in part by the German Academic Exchange Service (DAAD), and in part by the Ministry of Electronics and Information Technology, Government of India. The work of Philipp Gribisch was supported in part by the Department of Science and Technology (DST), Government of India, in part by the German Academic Exchange Service (DAAD), and in part by the Minna-James-Heineman Foundation for a Scholarship. The work of Hans-Jörg Osten was supported in part by the Department of Science and Technology (DST), Government of India and in part by the German Academic Exchange Service (DAAD). The work of Apurba Laha was supported in part by the Department of Science and Technology (DST), Government of India, in part by the German Academic Exchange Service (DAAD), and in part by the Ministry of Electronics and Information Technology, Government of India. The review of this article was arranged by Editor K. J. Chen. (Ritam Sarkar and Bhanu B. Upadhyay contributed equally to this work.) (Corresponding author: Apurba Laha.) Ritam Sarkar, Bhanu B. Upadhyay, Ravindra S. Pokharia, Dhiman Nag, S. Surapaneni, Swaroop Ganguly, Dipankar Saha, and Apurba Laha are with the Electrical Engineering Department, IIT Bombay, Mumbai 400076, India (e-mail: laha@ee.iitb.ac.in).

PY - 2021/4/22

Y1 - 2021/4/22

N2 - In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron mobility transistor (HEMT) grown on 150 mm Si (111) substrate. Introducing an epitaxial single crystalline Gd2O3 between the metal gate and AlGaN barrier not only improves the gate leakage current significantly but also enhances its thermal stability. We observe that there is no significant change in the gate leakage current even at 473 K compared to that measured at room temperature (RT) (298 K), and this is also evident in the transistor's subthreshold behavior at 473 K. We have determined the electric field within the Gd2O3 as well as AlGaN and investigated the leakage conduction mechanism through Gd2O3. The ${I}_{ \mathrm{ON}}/{I}_{ \mathrm{OFF}}$ of the transistor was measured as high as 108 even at 473 K with the lowest ${V}_{\text {TH}}$ shift (91.4 mV) with temperature. Our measurements also confirm the presence of polar optical phonon scattering, which directly affects the 2-D electron gas (2DEG) mobility at high temperatures and thus the electrical characteristics of HEMT and MOSHEMT.

AB - In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron mobility transistor (HEMT) grown on 150 mm Si (111) substrate. Introducing an epitaxial single crystalline Gd2O3 between the metal gate and AlGaN barrier not only improves the gate leakage current significantly but also enhances its thermal stability. We observe that there is no significant change in the gate leakage current even at 473 K compared to that measured at room temperature (RT) (298 K), and this is also evident in the transistor's subthreshold behavior at 473 K. We have determined the electric field within the Gd2O3 as well as AlGaN and investigated the leakage conduction mechanism through Gd2O3. The ${I}_{ \mathrm{ON}}/{I}_{ \mathrm{OFF}}$ of the transistor was measured as high as 108 even at 473 K with the lowest ${V}_{\text {TH}}$ shift (91.4 mV) with temperature. Our measurements also confirm the presence of polar optical phonon scattering, which directly affects the 2-D electron gas (2DEG) mobility at high temperatures and thus the electrical characteristics of HEMT and MOSHEMT.

KW - Epitaxial Gd₂O₃

KW - gate leakage

KW - ION/IOFF

KW - metal oxide semiconductor high electron mobility transistor (MOSHEMT)

KW - polar optical phonon scattering

KW - thermal stability

UR - http://www.scopus.com/inward/record.url?scp=85104607810&partnerID=8YFLogxK

U2 - 10.1109/TED.2021.3070838

DO - 10.1109/TED.2021.3070838

M3 - Article

AN - SCOPUS:85104607810

VL - 68

SP - 2653

EP - 2660

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

M1 - 9411704

ER -