Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Ritam Sarkar
  • S. Bhunia
  • D. Nag
  • B. C. Barik
  • K. Das Gupta
  • D. Saha
  • S. Ganguly
  • Apurba Laha
  • Jori Lemettinen
  • Christoffer Kauppinen
  • Iurii Kim
  • Sami Suihkonen
  • Philipp Gribisch
  • Hans-Jörg Osten

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
  • Aalto University
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Details

OriginalspracheEnglisch
Aufsatznummer063502
Seitenumfang5
FachzeitschriftApplied Physics Letters
Jahrgang115
Ausgabenummer6
PublikationsstatusVeröffentlicht - 8 Aug. 2019

Abstract

In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.

ASJC Scopus Sachgebiete

Zitieren

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application. / Sarkar, Ritam; Bhunia, S.; Nag, D. et al.
in: Applied Physics Letters, Jahrgang 115, Nr. 6, 063502, 08.08.2019.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Sarkar, R, Bhunia, S, Nag, D, Barik, BC, Das Gupta, K, Saha, D, Ganguly, S, Laha, A, Lemettinen, J, Kauppinen, C, Kim, I, Suihkonen, S, Gribisch, P & Osten, H-J 2019, 'Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application', Applied Physics Letters, Jg. 115, Nr. 6, 063502. https://doi.org/10.1063/1.5109861
Sarkar, R., Bhunia, S., Nag, D., Barik, B. C., Das Gupta, K., Saha, D., Ganguly, S., Laha, A., Lemettinen, J., Kauppinen, C., Kim, I., Suihkonen, S., Gribisch, P., & Osten, H.-J. (2019). Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application. Applied Physics Letters, 115(6), Artikel 063502. https://doi.org/10.1063/1.5109861
Sarkar R, Bhunia S, Nag D, Barik BC, Das Gupta K, Saha D et al. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application. Applied Physics Letters. 2019 Aug 8;115(6):063502. doi: 10.1063/1.5109861
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@article{53f9cd16c60647e9bbf2a6642aaa63a0,
title = "Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application",
abstract = "In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.",
author = "Ritam Sarkar and S. Bhunia and D. Nag and Barik, {B. C.} and {Das Gupta}, K. and D. Saha and S. Ganguly and Apurba Laha and Jori Lemettinen and Christoffer Kauppinen and Iurii Kim and Sami Suihkonen and Philipp Gribisch and Hans-J{\"o}rg Osten",
year = "2019",
month = aug,
day = "8",
doi = "10.1063/1.5109861",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "6",

}

Download

TY - JOUR

T1 - Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer

T2 - A fully epitaxial system for high power application

AU - Sarkar, Ritam

AU - Bhunia, S.

AU - Nag, D.

AU - Barik, B. C.

AU - Das Gupta, K.

AU - Saha, D.

AU - Ganguly, S.

AU - Laha, Apurba

AU - Lemettinen, Jori

AU - Kauppinen, Christoffer

AU - Kim, Iurii

AU - Suihkonen, Sami

AU - Gribisch, Philipp

AU - Osten, Hans-Jörg

PY - 2019/8/8

Y1 - 2019/8/8

N2 - In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.

AB - In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.

UR - http://www.scopus.com/inward/record.url?scp=85070539653&partnerID=8YFLogxK

U2 - 10.1063/1.5109861

DO - 10.1063/1.5109861

M3 - Article

AN - SCOPUS:85070539653

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063502

ER -