Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 473-476 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 175-176 |
| Ausgabenummer | PART 1 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1997 |
| Extern publiziert | Ja |
Abstract
The reduction of strain in SiGe layers on Si substrate is possible by the substitutional incorporation of carbon into the SiGe lattice. The carbon incorporation depending on various growth parameters could be improved by an additional hydrogen residual atmosphere during MBE. Growth temperature in the range between 400°C and 550°C supports the amount of substitutional carbon in silicon.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 175-176, Nr. PART 1, 01.05.1997, S. 473-476.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Enhancement of substitutional carbon incorporation in hydrogen-mediated pseudomorphic growth of strained alloy layers on Si(0 0 1)
AU - Lippert, G.
AU - Zaumseil, P.
AU - Osten, H. J.
AU - Kim, Myoengcheol
PY - 1997/5/1
Y1 - 1997/5/1
N2 - The reduction of strain in SiGe layers on Si substrate is possible by the substitutional incorporation of carbon into the SiGe lattice. The carbon incorporation depending on various growth parameters could be improved by an additional hydrogen residual atmosphere during MBE. Growth temperature in the range between 400°C and 550°C supports the amount of substitutional carbon in silicon.
AB - The reduction of strain in SiGe layers on Si substrate is possible by the substitutional incorporation of carbon into the SiGe lattice. The carbon incorporation depending on various growth parameters could be improved by an additional hydrogen residual atmosphere during MBE. Growth temperature in the range between 400°C and 550°C supports the amount of substitutional carbon in silicon.
UR - http://www.scopus.com/inward/record.url?scp=0031144952&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(96)00857-3
DO - 10.1016/S0022-0248(96)00857-3
M3 - Article
AN - SCOPUS:0031144952
VL - 175-176
SP - 473
EP - 476
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - PART 1
ER -