Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3786-3789 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 3 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 2006 |
| Veranstaltung | 4th International Conference on Semiconductor Quantum Dots, QD2006 - Chamonix-Mont Blanc, Frankreich Dauer: 1 Mai 2006 → 5 Mai 2006 |
Abstract
We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 3, Nr. 11, 01.12.2006, S. 3786-3789.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Enhanced shot noise in tunneling through coupled self-assembled InAs quantum dots
AU - Barthold, P.
AU - Hohls, F.
AU - Maire, N.
AU - Pierz, K.
AU - Haug, R. J.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
AB - We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
UR - http://www.scopus.com/inward/record.url?scp=49649127711&partnerID=8YFLogxK
U2 - 10.1002/pssc.200671581
DO - 10.1002/pssc.200671581
M3 - Conference article
AN - SCOPUS:49649127711
VL - 3
SP - 3786
EP - 3789
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 11
T2 - 4th International Conference on Semiconductor Quantum Dots, QD2006
Y2 - 1 May 2006 through 5 May 2006
ER -