Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Apurba Laha
  • A. Bin
  • P. R.P. Babu
  • A. Fissel
  • H. J. Osten

Externe Organisationen

  • Vellore Institute of Technology
  • Sun Yat-Sen University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksPhysics and Technology of High-k Materials 9
Herausgeber (Verlag)Electrochemical Society, Inc.
Seiten101-107
Seitenumfang7
Auflage3
ISBN (elektronisch)9781607682578
ISBN (Print)9781566779036
PublikationsstatusVeröffentlicht - 2011
Veranstaltung9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, USA / Vereinigte Staaten
Dauer: 10 Okt. 201112 Okt. 2011

Publikationsreihe

NameECS Transactions
Nummer3
Band41
ISSN (Print)1938-5862
ISSN (elektronisch)1938-6737

Abstract

The impact of carbon doping on electrical properties of epitaxial Gd 2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.

ASJC Scopus Sachgebiete

Zitieren

Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates. / Laha, Apurba; Bin, A.; Babu, P. R.P. et al.
Physics and Technology of High-k Materials 9. 3. Aufl. Electrochemical Society, Inc., 2011. S. 101-107 (ECS Transactions; Band 41, Nr. 3).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Laha, A, Bin, A, Babu, PRP, Fissel, A & Osten, HJ 2011, Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates. in Physics and Technology of High-k Materials 9. 3 Aufl., ECS Transactions, Nr. 3, Bd. 41, Electrochemical Society, Inc., S. 101-107, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, USA / Vereinigte Staaten, 10 Okt. 2011. https://doi.org/10.1149/1.3633025
Laha, A., Bin, A., Babu, P. R. P., Fissel, A., & Osten, H. J. (2011). Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates. In Physics and Technology of High-k Materials 9 (3 Aufl., S. 101-107). (ECS Transactions; Band 41, Nr. 3). Electrochemical Society, Inc.. https://doi.org/10.1149/1.3633025
Laha A, Bin A, Babu PRP, Fissel A, Osten HJ. Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates. in Physics and Technology of High-k Materials 9. 3 Aufl. Electrochemical Society, Inc. 2011. S. 101-107. (ECS Transactions; 3). doi: 10.1149/1.3633025
Laha, Apurba ; Bin, A. ; Babu, P. R.P. et al. / Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates. Physics and Technology of High-k Materials 9. 3. Aufl. Electrochemical Society, Inc., 2011. S. 101-107 (ECS Transactions; 3).
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abstract = "The impact of carbon doping on electrical properties of epitaxial Gd 2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.",
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