Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2282-2285 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronic engineering |
| Jahrgang | 84 |
| Ausgabenummer | 9-10 |
| Frühes Online-Datum | 30 Mai 2007 |
| Publikationsstatus | Veröffentlicht - Sept. 2007 |
Abstract
The impact of interface layer composition on electrical properties of epitaxial Gd2O3 thin films on Si(001) substrates have been investigated. The electrical properties of epitaxial Gd2O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt/Gd2O3/Si MOS structures was as low as 0.76 nm with leakage current density of 15 mA/cm2 at (Vg-VFB) = 1 V. The corresponding density of interface states was found to be 2.3*1012cm-2eV-1. We also find that a change in the interface layer composition significantly alters band alignment of Gd2O3 layer with respect to Si substrates.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronic engineering, Jahrgang 84, Nr. 9-10, 09.2007, S. 2282-2285.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates
T2 - a route towards tuning the electrical properties
AU - Laha, Apurba
AU - Fissel, A.
AU - Osten, H. J.
PY - 2007/9
Y1 - 2007/9
N2 - The impact of interface layer composition on electrical properties of epitaxial Gd2O3 thin films on Si(001) substrates have been investigated. The electrical properties of epitaxial Gd2O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt/Gd2O3/Si MOS structures was as low as 0.76 nm with leakage current density of 15 mA/cm2 at (Vg-VFB) = 1 V. The corresponding density of interface states was found to be 2.3*1012cm-2eV-1. We also find that a change in the interface layer composition significantly alters band alignment of Gd2O3 layer with respect to Si substrates.
AB - The impact of interface layer composition on electrical properties of epitaxial Gd2O3 thin films on Si(001) substrates have been investigated. The electrical properties of epitaxial Gd2O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt/Gd2O3/Si MOS structures was as low as 0.76 nm with leakage current density of 15 mA/cm2 at (Vg-VFB) = 1 V. The corresponding density of interface states was found to be 2.3*1012cm-2eV-1. We also find that a change in the interface layer composition significantly alters band alignment of Gd2O3 layer with respect to Si substrates.
KW - Epitaxy
KW - GdO
KW - High-K
KW - Interface engineering
UR - http://www.scopus.com/inward/record.url?scp=34248667626&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2007.04.051
DO - 10.1016/j.mee.2007.04.051
M3 - Article
AN - SCOPUS:34248667626
VL - 84
SP - 2282
EP - 2285
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 9-10
ER -