Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 409-411 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica B: Condensed Matter |
| Jahrgang | 272 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 7 Dez. 1999 |
| Extern publiziert | Ja |
| Veranstaltung | 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Dauer: 19 Juli 1999 → 23 Juli 1999 |
Abstract
The cooling of a hot photoexcited exciton distribution in wurtzite GaN is studied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the excitons decreases for sample temperatures below 60 K within 150 ps down to the lattice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Physica B: Condensed Matter, Jahrgang 272, Nr. 1-4, 07.12.1999, S. 409-411.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Energy loss rate of excitons in GaN
AU - Hägele, D.
AU - Zimmermann, R.
AU - Oestreich, Michael
AU - Hofmann, M. R.
AU - Rühle, W. W.
AU - Meyer, Bruno K.
AU - Amano, H.
AU - Akasaki, I.
PY - 1999/12/7
Y1 - 1999/12/7
N2 - The cooling of a hot photoexcited exciton distribution in wurtzite GaN is studied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the excitons decreases for sample temperatures below 60 K within 150 ps down to the lattice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV.
AB - The cooling of a hot photoexcited exciton distribution in wurtzite GaN is studied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the excitons decreases for sample temperatures below 60 K within 150 ps down to the lattice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV.
UR - http://www.scopus.com/inward/record.url?scp=0343081460&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00387-7
DO - 10.1016/S0921-4526(99)00387-7
M3 - Conference article
AN - SCOPUS:0343081460
VL - 272
SP - 409
EP - 411
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
T2 - 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -