Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Fei Zhang
  • Gao Shan Huang
  • Xiao Fei Nie
  • Xin Cao
  • Zhe Ma
  • Fei Ding
  • Zeng Feng Di
  • Hong Lou Zhen
  • Yong Feng Mei

Organisationseinheiten

Externe Organisationen

  • Fudan University
  • CAS - Shanghai Institute of Technical Physics
  • CAS - Shanghai Institute of Microsystem and Information Technology
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Details

OriginalspracheEnglisch
Seiten (von - bis)2938-2942
Seitenumfang5
FachzeitschriftPhysics Letters: A
Jahrgang383
Ausgabenummer24
PublikationsstatusVeröffentlicht - 22 Aug. 2019

Abstract

In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al0.26Ga0.74As quantum wells (QWs). Photoluminescence (PL) characterizations demonstrate that the self-assembled structures have different optical transition properties and the modulation of the energy band is thus realized. Detailed spectral analyses disclose that the small strain change in structures with different curvatures cannot cause remarkable change in energy bands in Al0.26Ga0.74As layer. On the other hand, the optical transitions of GaAs QW layer is influenced by the strain evolution in term of light emission intensity. We also find the first order Stark effect in rolled-up nanomembrane with diameter of 150 μm, which is closely connected with the coupling effect between the deformation potential and the piezoelectric potential. Our work may pave a way for the fabrication of high performance rolled-QW infrared photo-detectors.

ASJC Scopus Sachgebiete

Zitieren

Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes. / Zhang, Fei; Huang, Gao Shan; Nie, Xiao Fei et al.
in: Physics Letters: A, Jahrgang 383, Nr. 24, 22.08.2019, S. 2938-2942.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Zhang F, Huang GS, Nie XF, Cao X, Ma Z, Ding F et al. Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes. Physics Letters: A. 2019 Aug 22;383(24):2938-2942. doi: 10.15488/5472, 10.1016/j.physleta.2019.06.034
Zhang, Fei ; Huang, Gao Shan ; Nie, Xiao Fei et al. / Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes. in: Physics Letters: A. 2019 ; Jahrgang 383, Nr. 24. S. 2938-2942.
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title = "Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes",
abstract = "In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al0.26Ga0.74As quantum wells (QWs). Photoluminescence (PL) characterizations demonstrate that the self-assembled structures have different optical transition properties and the modulation of the energy band is thus realized. Detailed spectral analyses disclose that the small strain change in structures with different curvatures cannot cause remarkable change in energy bands in Al0.26Ga0.74As layer. On the other hand, the optical transitions of GaAs QW layer is influenced by the strain evolution in term of light emission intensity. We also find the first order Stark effect in rolled-up nanomembrane with diameter of 150 μm, which is closely connected with the coupling effect between the deformation potential and the piezoelectric potential. Our work may pave a way for the fabrication of high performance rolled-QW infrared photo-detectors.",
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author = "Fei Zhang and Huang, {Gao Shan} and Nie, {Xiao Fei} and Xin Cao and Zhe Ma and Fei Ding and Di, {Zeng Feng} and Zhen, {Hong Lou} and Mei, {Yong Feng}",
note = "Funding information: This work was financially supported by the National Natural Science Foundation of China (Nos. 61728501, 61805042, U1632115, and 51711540298), the China Postdoctoral Science Foundation (No. 2018M632014), the Science and Technology Commission of Shanghai Municipality (Nos. 18ZR1405100 and 17JC1401700), the Program of Shanghai Academic/Technology Research Leader (Nos. 16XD1404200 and 19XD1400600) and the Changjiang Young Scholars Program of China.",
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T1 - Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

AU - Zhang, Fei

AU - Huang, Gao Shan

AU - Nie, Xiao Fei

AU - Cao, Xin

AU - Ma, Zhe

AU - Ding, Fei

AU - Di, Zeng Feng

AU - Zhen, Hong Lou

AU - Mei, Yong Feng

N1 - Funding information: This work was financially supported by the National Natural Science Foundation of China (Nos. 61728501, 61805042, U1632115, and 51711540298), the China Postdoctoral Science Foundation (No. 2018M632014), the Science and Technology Commission of Shanghai Municipality (Nos. 18ZR1405100 and 17JC1401700), the Program of Shanghai Academic/Technology Research Leader (Nos. 16XD1404200 and 19XD1400600) and the Changjiang Young Scholars Program of China.

PY - 2019/8/22

Y1 - 2019/8/22

N2 - In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al0.26Ga0.74As quantum wells (QWs). Photoluminescence (PL) characterizations demonstrate that the self-assembled structures have different optical transition properties and the modulation of the energy band is thus realized. Detailed spectral analyses disclose that the small strain change in structures with different curvatures cannot cause remarkable change in energy bands in Al0.26Ga0.74As layer. On the other hand, the optical transitions of GaAs QW layer is influenced by the strain evolution in term of light emission intensity. We also find the first order Stark effect in rolled-up nanomembrane with diameter of 150 μm, which is closely connected with the coupling effect between the deformation potential and the piezoelectric potential. Our work may pave a way for the fabrication of high performance rolled-QW infrared photo-detectors.

AB - In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al0.26Ga0.74As quantum wells (QWs). Photoluminescence (PL) characterizations demonstrate that the self-assembled structures have different optical transition properties and the modulation of the energy band is thus realized. Detailed spectral analyses disclose that the small strain change in structures with different curvatures cannot cause remarkable change in energy bands in Al0.26Ga0.74As layer. On the other hand, the optical transitions of GaAs QW layer is influenced by the strain evolution in term of light emission intensity. We also find the first order Stark effect in rolled-up nanomembrane with diameter of 150 μm, which is closely connected with the coupling effect between the deformation potential and the piezoelectric potential. Our work may pave a way for the fabrication of high performance rolled-QW infrared photo-detectors.

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