Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Apurba Laha
  • E. Bugiel
  • M. Jestremski
  • R. Ranjith
  • A. Fissel
  • H. J. Osten

Organisationseinheiten

Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer475604
FachzeitschriftNANOTECHNOLOGY
Jahrgang20
Ausgabenummer47
PublikationsstatusVeröffentlicht - 29 Okt. 2009

Abstract

An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O 3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.

ASJC Scopus Sachgebiete

Zitieren

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. / Laha, Apurba; Bugiel, E.; Jestremski, M. et al.
in: NANOTECHNOLOGY, Jahrgang 20, Nr. 47, 475604, 29.10.2009.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Laha, A, Bugiel, E, Jestremski, M, Ranjith, R, Fissel, A & Osten, HJ 2009, 'Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide', NANOTECHNOLOGY, Jg. 20, Nr. 47, 475604. https://doi.org/10.1088/0957-4484/20/47/475604
Laha, A., Bugiel, E., Jestremski, M., Ranjith, R., Fissel, A., & Osten, H. J. (2009). Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. NANOTECHNOLOGY, 20(47), Artikel 475604. https://doi.org/10.1088/0957-4484/20/47/475604
Laha A, Bugiel E, Jestremski M, Ranjith R, Fissel A, Osten HJ. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. NANOTECHNOLOGY. 2009 Okt 29;20(47):475604. doi: 10.1088/0957-4484/20/47/475604
Laha, Apurba ; Bugiel, E. ; Jestremski, M. et al. / Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. in: NANOTECHNOLOGY. 2009 ; Jahrgang 20, Nr. 47.
Download
@article{7fd032c45511411ca8c28256b60b612f,
title = "Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide",
abstract = "An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O 3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.",
author = "Apurba Laha and E. Bugiel and M. Jestremski and R. Ranjith and A. Fissel and Osten, {H. J.}",
year = "2009",
month = oct,
day = "29",
doi = "10.1088/0957-4484/20/47/475604",
language = "English",
volume = "20",
journal = "NANOTECHNOLOGY",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "47",

}

Download

TY - JOUR

T1 - Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

AU - Laha, Apurba

AU - Bugiel, E.

AU - Jestremski, M.

AU - Ranjith, R.

AU - Fissel, A.

AU - Osten, H. J.

PY - 2009/10/29

Y1 - 2009/10/29

N2 - An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O 3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.

AB - An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O 3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.

UR - http://www.scopus.com/inward/record.url?scp=70449900620&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/20/47/475604

DO - 10.1088/0957-4484/20/47/475604

M3 - Article

AN - SCOPUS:70449900620

VL - 20

JO - NANOTECHNOLOGY

JF - NANOTECHNOLOGY

SN - 0957-4484

IS - 47

M1 - 475604

ER -