Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • S.J. Wolter
  • D. Geisler
  • J. Hensen
  • M. Köntges
  • S. Kajari-Schröder
  • D.W. Bahnemann
  • R. Brendel

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Details

OriginalspracheEnglisch
Aufsatznummer045007
FachzeitschriftSemiconductor Science and Technology
Jahrgang32
Ausgabenummer4
PublikationsstatusVeröffentlicht - Apr. 2017

Abstract

Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.

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Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon. / Wolter, S.J.; Geisler, D.; Hensen, J. et al.
in: Semiconductor Science and Technology, Jahrgang 32, Nr. 4, 045007, 04.2017.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Wolter, SJ, Geisler, D, Hensen, J, Köntges, M, Kajari-Schröder, S, Bahnemann, DW & Brendel, R 2017, 'Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon', Semiconductor Science and Technology, Jg. 32, Nr. 4, 045007. https://doi.org/10.1088/1361-6641/aa5bb7
Wolter, S. J., Geisler, D., Hensen, J., Köntges, M., Kajari-Schröder, S., Bahnemann, D. W., & Brendel, R. (2017). Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon. Semiconductor Science and Technology, 32(4), Artikel 045007. https://doi.org/10.1088/1361-6641/aa5bb7
Wolter SJ, Geisler D, Hensen J, Köntges M, Kajari-Schröder S, Bahnemann DW et al. Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon. Semiconductor Science and Technology. 2017 Apr;32(4):045007. doi: 10.1088/1361-6641/aa5bb7
Wolter, S.J. ; Geisler, D. ; Hensen, J. et al. / Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon. in: Semiconductor Science and Technology. 2017 ; Jahrgang 32, Nr. 4.
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AU - Wolter, S.J.

AU - Geisler, D.

AU - Hensen, J.

AU - Köntges, M.

AU - Kajari-Schröder, S.

AU - Bahnemann, D.W.

AU - Brendel, R.

N1 - Publisher Copyright: © 2017 IOP Publishing Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

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N2 - Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.

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