Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Thorsten Dullweber
  • Helge Hannebauer
  • Silke Dorn
  • Sabrina Schimanke
  • Agnes Merkle
  • Carsten Hampe
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)509-514
Seitenumfang6
FachzeitschriftProgress in Photovoltaics: Research and Applications
Jahrgang25
Ausgabenummer7
Frühes Online-Datum11 Aug. 2016
PublikationsstatusVeröffentlicht - Juli 2017

Abstract

Passivated Emitter and Rear Cells (PERC) are currently being introduced into mass production. The conversion efficiency of industrial p-type PERC cells is limited by the emitter saturation current density of around 90 fA/cm2 of conventional homogeneously POCl3 diffused emitters. In this paper we investigate two alternative emitter formation technologies. The first approach named in-situ oxidation inserts a short thermal oxidation in-between the phosphorus silicate glass deposition and the drive-in of a conventional homogeneous POCl3 diffusion thereby reducing the phosphorus surface concentration. The second approach named Gas Phase Etch Back (GEB) selectively removes around 40 nm of the highly doped surface of the POCl3 diffused emitter by the reactive gas phase of the wet chemical rear polishing bath. Whereas the conventional POCl3 emitter exhibits a phosphorus surface doping concentration of 3 × 1020 cm−3, the in-situ oxidation and the GEB process reduce the doping concentration to 7 × 1019 cm−3 and 4 × 1019 cm−3, respectively. Accordingly, the emitter saturation current density is reduced to excellent values of 22 fA/cm2 (in-situ oxidation) and 28 fA/cm2 (GEB) compared with 89 fA/cm2 for the reference POCl3 diffusion. Whereas the reference POCl3 emitter limits the PERC conversion efficiency η to 21.1% and the open circuit voltage Voc to 655 mV, the in-situ oxidation improves the PERC current–voltage parameters up to 21.3% and 663 mV. The highest efficiency of 21.6% is obtained with the selective GEB emitter. When solving series resistance issues with the most advanced GEB emitter, the measured Voc and Jsc values would support PERC conversion efficiencies up to 21.9%.

ASJC Scopus Sachgebiete

Ziele für nachhaltige Entwicklung

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Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency. / Dullweber, Thorsten; Hannebauer, Helge; Dorn, Silke et al.
in: Progress in Photovoltaics: Research and Applications, Jahrgang 25, Nr. 7, 07.2017, S. 509-514.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Dullweber T, Hannebauer H, Dorn S, Schimanke S, Merkle A, Hampe C et al. Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency. Progress in Photovoltaics: Research and Applications. 2017 Jul;25(7):509-514. Epub 2016 Aug 11. doi: 10.1002/pip.2806
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title = "Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency",
abstract = "Passivated Emitter and Rear Cells (PERC) are currently being introduced into mass production. The conversion efficiency of industrial p-type PERC cells is limited by the emitter saturation current density of around 90 fA/cm2 of conventional homogeneously POCl3 diffused emitters. In this paper we investigate two alternative emitter formation technologies. The first approach named in-situ oxidation inserts a short thermal oxidation in-between the phosphorus silicate glass deposition and the drive-in of a conventional homogeneous POCl3 diffusion thereby reducing the phosphorus surface concentration. The second approach named Gas Phase Etch Back (GEB) selectively removes around 40 nm of the highly doped surface of the POCl3 diffused emitter by the reactive gas phase of the wet chemical rear polishing bath. Whereas the conventional POCl3 emitter exhibits a phosphorus surface doping concentration of 3 × 1020 cm−3, the in-situ oxidation and the GEB process reduce the doping concentration to 7 × 1019 cm−3 and 4 × 1019 cm−3, respectively. Accordingly, the emitter saturation current density is reduced to excellent values of 22 fA/cm2 (in-situ oxidation) and 28 fA/cm2 (GEB) compared with 89 fA/cm2 for the reference POCl3 diffusion. Whereas the reference POCl3 emitter limits the PERC conversion efficiency η to 21.1% and the open circuit voltage Voc to 655 mV, the in-situ oxidation improves the PERC current–voltage parameters up to 21.3% and 663 mV. The highest efficiency of 21.6% is obtained with the selective GEB emitter. When solving series resistance issues with the most advanced GEB emitter, the measured Voc and Jsc values would support PERC conversion efficiencies up to 21.9%.",
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note = "Publisher Copyright: Copyright {\textcopyright} 2016 John Wiley & Sons, Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",
year = "2017",
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doi = "10.1002/pip.2806",
language = "English",
volume = "25",
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journal = "Progress in Photovoltaics: Research and Applications",
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Download

TY - JOUR

T1 - Emitter saturation current densities of 22 fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency

AU - Dullweber, Thorsten

AU - Hannebauer, Helge

AU - Dorn, Silke

AU - Schimanke, Sabrina

AU - Merkle, Agnes

AU - Hampe, Carsten

AU - Brendel, Rolf

N1 - Publisher Copyright: Copyright © 2016 John Wiley & Sons, Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/7

Y1 - 2017/7

N2 - Passivated Emitter and Rear Cells (PERC) are currently being introduced into mass production. The conversion efficiency of industrial p-type PERC cells is limited by the emitter saturation current density of around 90 fA/cm2 of conventional homogeneously POCl3 diffused emitters. In this paper we investigate two alternative emitter formation technologies. The first approach named in-situ oxidation inserts a short thermal oxidation in-between the phosphorus silicate glass deposition and the drive-in of a conventional homogeneous POCl3 diffusion thereby reducing the phosphorus surface concentration. The second approach named Gas Phase Etch Back (GEB) selectively removes around 40 nm of the highly doped surface of the POCl3 diffused emitter by the reactive gas phase of the wet chemical rear polishing bath. Whereas the conventional POCl3 emitter exhibits a phosphorus surface doping concentration of 3 × 1020 cm−3, the in-situ oxidation and the GEB process reduce the doping concentration to 7 × 1019 cm−3 and 4 × 1019 cm−3, respectively. Accordingly, the emitter saturation current density is reduced to excellent values of 22 fA/cm2 (in-situ oxidation) and 28 fA/cm2 (GEB) compared with 89 fA/cm2 for the reference POCl3 diffusion. Whereas the reference POCl3 emitter limits the PERC conversion efficiency η to 21.1% and the open circuit voltage Voc to 655 mV, the in-situ oxidation improves the PERC current–voltage parameters up to 21.3% and 663 mV. The highest efficiency of 21.6% is obtained with the selective GEB emitter. When solving series resistance issues with the most advanced GEB emitter, the measured Voc and Jsc values would support PERC conversion efficiencies up to 21.9%.

AB - Passivated Emitter and Rear Cells (PERC) are currently being introduced into mass production. The conversion efficiency of industrial p-type PERC cells is limited by the emitter saturation current density of around 90 fA/cm2 of conventional homogeneously POCl3 diffused emitters. In this paper we investigate two alternative emitter formation technologies. The first approach named in-situ oxidation inserts a short thermal oxidation in-between the phosphorus silicate glass deposition and the drive-in of a conventional homogeneous POCl3 diffusion thereby reducing the phosphorus surface concentration. The second approach named Gas Phase Etch Back (GEB) selectively removes around 40 nm of the highly doped surface of the POCl3 diffused emitter by the reactive gas phase of the wet chemical rear polishing bath. Whereas the conventional POCl3 emitter exhibits a phosphorus surface doping concentration of 3 × 1020 cm−3, the in-situ oxidation and the GEB process reduce the doping concentration to 7 × 1019 cm−3 and 4 × 1019 cm−3, respectively. Accordingly, the emitter saturation current density is reduced to excellent values of 22 fA/cm2 (in-situ oxidation) and 28 fA/cm2 (GEB) compared with 89 fA/cm2 for the reference POCl3 diffusion. Whereas the reference POCl3 emitter limits the PERC conversion efficiency η to 21.1% and the open circuit voltage Voc to 655 mV, the in-situ oxidation improves the PERC current–voltage parameters up to 21.3% and 663 mV. The highest efficiency of 21.6% is obtained with the selective GEB emitter. When solving series resistance issues with the most advanced GEB emitter, the measured Voc and Jsc values would support PERC conversion efficiencies up to 21.9%.

KW - emitter

KW - gas phase etch back

KW - in-situ oxidation

KW - PERC

KW - phosphorus doping

KW - silicon solar cells

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U2 - 10.1002/pip.2806

DO - 10.1002/pip.2806

M3 - Article

AN - SCOPUS:84981555994

VL - 25

SP - 509

EP - 514

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

SN - 1062-7995

IS - 7

ER -