Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6376243 |
| Seiten (von - bis) | 4594-4602 |
| Seitenumfang | 9 |
| Fachzeitschrift | IEEE Transactions on Power Electronics |
| Jahrgang | 28 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Extern publiziert | Ja |
Abstract
The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low-noise architectures, the right switching frequency, and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relative simple simulation setup gives results with less than 3dB ${\bm \mu }$V accuracy. A tripler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by ${\bm \sim }$50dB${\bm \mu }$V versus a conventional voltage-mode charge pump.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Transactions on Power Electronics, Jahrgang 28, Nr. 10, 6376243, 2013, S. 4594-4602.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - EMC optimized design of linear regulators including a charge pump
AU - Wittmann, Juergen
AU - Neidhardt, Jochen
AU - Wicht, Bernhard
N1 - Copyright: Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low-noise architectures, the right switching frequency, and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relative simple simulation setup gives results with less than 3dB ${\bm \mu }$V accuracy. A tripler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by ${\bm \sim }$50dB${\bm \mu }$V versus a conventional voltage-mode charge pump.
AB - The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low-noise architectures, the right switching frequency, and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relative simple simulation setup gives results with less than 3dB ${\bm \mu }$V accuracy. A tripler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by ${\bm \sim }$50dB${\bm \mu }$V versus a conventional voltage-mode charge pump.
KW - Charge pump
KW - electromagnetic compatibility (EMC)
KW - EMC simulation
KW - fast Fourier transform (FFT)
KW - low dropout regulator (LDO)
KW - voltage regulator
UR - http://www.scopus.com/inward/record.url?scp=84875123652&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2012.2232785
DO - 10.1109/TPEL.2012.2232785
M3 - Article
AN - SCOPUS:84875123652
VL - 28
SP - 4594
EP - 4602
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 10
M1 - 6376243
ER -