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EMC influence of the charge pump in linear regulators - Design, simulation and measurements

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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OriginalspracheEnglisch
Titel des Sammelwerks2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Seiten1359-1362
Seitenumfang4
PublikationsstatusVeröffentlicht - 2011
Extern publiziertJa
Veranstaltung2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brasilien
Dauer: 15 Mai 201118 Mai 2011

Publikationsreihe

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Abstract

The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low noise architectures, the right switching frequency and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relatively simple simulation setup gives results with #60;3dBV accuracy. A trippler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by 50dBV versus a conventional voltage mode charge pump.

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EMC influence of the charge pump in linear regulators - Design, simulation and measurements. / Wittmann, Juergen; Wicht, Bernhard.
2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011. 2011. S. 1359-1362 5937824 (Proceedings - IEEE International Symposium on Circuits and Systems).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Wittmann, J & Wicht, B 2011, EMC influence of the charge pump in linear regulators - Design, simulation and measurements. in 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011., 5937824, Proceedings - IEEE International Symposium on Circuits and Systems, S. 1359-1362, 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011, Rio de Janeiro, Brasilien, 15 Mai 2011. https://doi.org/10.1109/ISCAS.2011.5937824
Wittmann, J., & Wicht, B. (2011). EMC influence of the charge pump in linear regulators - Design, simulation and measurements. In 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 (S. 1359-1362). Artikel 5937824 (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2011.5937824
Wittmann J, Wicht B. EMC influence of the charge pump in linear regulators - Design, simulation and measurements. in 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011. 2011. S. 1359-1362. 5937824. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2011.5937824
Wittmann, Juergen ; Wicht, Bernhard. / EMC influence of the charge pump in linear regulators - Design, simulation and measurements. 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011. 2011. S. 1359-1362 (Proceedings - IEEE International Symposium on Circuits and Systems).
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abstract = "The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low noise architectures, the right switching frequency and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relatively simple simulation setup gives results with #60;3dBV accuracy. A trippler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by 50dBV versus a conventional voltage mode charge pump.",
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