Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 18-23 |
| Seitenumfang | 6 |
| ISBN (elektronisch) | 9781467378963 |
| Publikationsstatus | Veröffentlicht - 15 Dez. 2015 |
| Extern publiziert | Ja |
| Veranstaltung | 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2015 - Edinburgh, Großbritannien / Vereinigtes Königreich Dauer: 10 Nov. 2015 → 13 Nov. 2015 |
Publikationsreihe
| Name | EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits |
|---|
Abstract
There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Physik und Astronomie (insg.)
- Strahlung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2015. S. 18-23 7358323 (EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver
AU - Schindler, Alexis
AU - Koeppl, Benno
AU - Wicht, Bernhard
N1 - Publisher Copyright: © 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015/12/15
Y1 - 2015/12/15
N2 - There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.
AB - There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.
UR - http://www.scopus.com/inward/record.url?scp=84964038633&partnerID=8YFLogxK
U2 - 10.1109/EMCCompo.2015.7358323
DO - 10.1109/EMCCompo.2015.7358323
M3 - Conference contribution
AN - SCOPUS:84964038633
T3 - EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits
SP - 18
EP - 23
BT - EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2015
Y2 - 10 November 2015 through 13 November 2015
ER -