Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 85015 |
| Seitenumfang | 1 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 23 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - Aug. 2008 |
Abstract
Structural and electrical properties of nonvolatile Si nanocluster memories using epitaxial Gd2O3 as a control and tunneling layer are demonstrated for the first time. Nanoclusters with average size of 5 nm and density of 2 × 1012 cm-2 exhibit excellent charge storage capacity with higher retention (∼105 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O 3/Si MOS capacitors comprising Si nanoclusters display large hysteresis (∼1.5-2 V) in capacitance-voltage measurements. We find that these Si nanoclusters are bonded with the metal oxide via Gd-O-Si (silicate-like) bonds as observed in x-ray photoelectron spectroscopy measurements. With such results demonstrated, Si nanoclusters embedded in an epitaxial rare earth oxide could be a potential candidate for future non-volatile memory devices.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 23, Nr. 8, 08.2008, S. 85015.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications
AU - Laha, Apurba
AU - Kühne, D.
AU - Bugiel, E.
AU - Fissel, A.
AU - Osten, H. J.
PY - 2008/8
Y1 - 2008/8
N2 - Structural and electrical properties of nonvolatile Si nanocluster memories using epitaxial Gd2O3 as a control and tunneling layer are demonstrated for the first time. Nanoclusters with average size of 5 nm and density of 2 × 1012 cm-2 exhibit excellent charge storage capacity with higher retention (∼105 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O 3/Si MOS capacitors comprising Si nanoclusters display large hysteresis (∼1.5-2 V) in capacitance-voltage measurements. We find that these Si nanoclusters are bonded with the metal oxide via Gd-O-Si (silicate-like) bonds as observed in x-ray photoelectron spectroscopy measurements. With such results demonstrated, Si nanoclusters embedded in an epitaxial rare earth oxide could be a potential candidate for future non-volatile memory devices.
AB - Structural and electrical properties of nonvolatile Si nanocluster memories using epitaxial Gd2O3 as a control and tunneling layer are demonstrated for the first time. Nanoclusters with average size of 5 nm and density of 2 × 1012 cm-2 exhibit excellent charge storage capacity with higher retention (∼105 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O 3/Si MOS capacitors comprising Si nanoclusters display large hysteresis (∼1.5-2 V) in capacitance-voltage measurements. We find that these Si nanoclusters are bonded with the metal oxide via Gd-O-Si (silicate-like) bonds as observed in x-ray photoelectron spectroscopy measurements. With such results demonstrated, Si nanoclusters embedded in an epitaxial rare earth oxide could be a potential candidate for future non-volatile memory devices.
UR - http://www.scopus.com/inward/record.url?scp=51849126419&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/8/085015
DO - 10.1088/0268-1242/23/8/085015
M3 - Article
AN - SCOPUS:51849126419
VL - 23
SP - 85015
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 8
ER -