Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Magnetic Materials, Processes, and Devices 12 |
| Herausgeber (Verlag) | Electrochemical Society, Inc. |
| Seiten | 207-216 |
| Seitenumfang | 10 |
| Auflage | 10 |
| ISBN (Print) | 9781607683582 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Veranstaltung | 12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012 - Honolulu, HI, USA / Vereinigte Staaten Dauer: 8 Okt. 2012 → 10 Okt. 2012 |
Publikationsreihe
| Name | ECS Transactions |
|---|---|
| Nummer | 10 |
| Band | 50 |
| ISSN (Print) | 1938-5862 |
| ISSN (elektronisch) | 1938-6737 |
Abstract
Surface modification with Cu and Sn followed by bonding provides a suitable method to create a hermetic package in MEMS. By using the eutectic phase of these two materials the bonding temperature can be limited by 300°C, which is in working range for the most micro electro-mechanical systems (MEMS) applications. In this investigation Si chips are bonded usingelectroplated Cu on the one part and a stacked combination of sputter deposited Sn and electroplated Cu on the counterpart. For analyzing the bond quality, the shear tests are carried out to find the optimum thickness of the bonding materials and characterize the package.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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Magnetic Materials, Processes, and Devices 12. 10. Aufl. Electrochemical Society, Inc., 2013. S. 207-216 (ECS Transactions; Band 50, Nr. 10).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Electroplating of Cu/Sn layers for hermetic encapsulation for vacuum applications
AU - Rissing, L.
AU - Wurz, M. C.
AU - Cvetkovic, S.
AU - Bach, F.
PY - 2013
Y1 - 2013
N2 - Surface modification with Cu and Sn followed by bonding provides a suitable method to create a hermetic package in MEMS. By using the eutectic phase of these two materials the bonding temperature can be limited by 300°C, which is in working range for the most micro electro-mechanical systems (MEMS) applications. In this investigation Si chips are bonded usingelectroplated Cu on the one part and a stacked combination of sputter deposited Sn and electroplated Cu on the counterpart. For analyzing the bond quality, the shear tests are carried out to find the optimum thickness of the bonding materials and characterize the package.
AB - Surface modification with Cu and Sn followed by bonding provides a suitable method to create a hermetic package in MEMS. By using the eutectic phase of these two materials the bonding temperature can be limited by 300°C, which is in working range for the most micro electro-mechanical systems (MEMS) applications. In this investigation Si chips are bonded usingelectroplated Cu on the one part and a stacked combination of sputter deposited Sn and electroplated Cu on the counterpart. For analyzing the bond quality, the shear tests are carried out to find the optimum thickness of the bonding materials and characterize the package.
UR - http://www.scopus.com/inward/record.url?scp=84885795542&partnerID=8YFLogxK
U2 - 10.1149/05010.0207ecst
DO - 10.1149/05010.0207ecst
M3 - Conference contribution
AN - SCOPUS:84885795542
SN - 9781607683582
T3 - ECS Transactions
SP - 207
EP - 216
BT - Magnetic Materials, Processes, and Devices 12
PB - Electrochemical Society, Inc.
T2 - 12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012
Y2 - 8 October 2012 through 10 October 2012
ER -