Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 075216 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 81 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 26 Feb. 2010 |
Abstract
We have measured the electron-spin-relaxation rate and the integrated spin noise power in n -doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging from 2.7× 1015 to 8.8× 1016 cm-3 using spin noise spectroscopy. The temperature-dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-to-insulator transition shows the longest spin-relaxation time at low temperatures, a clear crossing of the spin-relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin-relaxation time above 70 K.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 81, Nr. 7, 075216, 26.02.2010.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
AU - Römer, Michael
AU - Bernien, Hannes
AU - Müller, Georg M.
AU - Schuh, D.
AU - Hübner, Jens
AU - Oestreich, Michael
PY - 2010/2/26
Y1 - 2010/2/26
N2 - We have measured the electron-spin-relaxation rate and the integrated spin noise power in n -doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging from 2.7× 1015 to 8.8× 1016 cm-3 using spin noise spectroscopy. The temperature-dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-to-insulator transition shows the longest spin-relaxation time at low temperatures, a clear crossing of the spin-relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin-relaxation time above 70 K.
AB - We have measured the electron-spin-relaxation rate and the integrated spin noise power in n -doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging from 2.7× 1015 to 8.8× 1016 cm-3 using spin noise spectroscopy. The temperature-dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-to-insulator transition shows the longest spin-relaxation time at low temperatures, a clear crossing of the spin-relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin-relaxation time above 70 K.
UR - http://www.scopus.com/inward/record.url?scp=77954836042&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.81.075216
DO - 10.1103/PhysRevB.81.075216
M3 - Article
AN - SCOPUS:77954836042
VL - 81
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 7
M1 - 075216
ER -