Electronically stimulated degradation of crystalline silicon solar cells

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • J. Schmidt
  • K. Bothe
  • D. Macdonald
  • J. Adey
  • R. Jones
  • D. W. Palmer

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Australian National University
  • University of Exeter
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
AufsatznummerE6.1
Seiten (von - bis)221-232
Seitenumfang12
FachzeitschriftMaterials Research Society Symposium Proceedings
Jahrgang864
PublikationsstatusVeröffentlicht - 2005
Extern publiziertJa
Veranstaltung2005 materials Research Society Spring Meeting - San Francisco, CA, USA / Vereinigte Staaten
Dauer: 28 März 20051 Apr. 2005

Abstract

Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

ASJC Scopus Sachgebiete

Zitieren

Electronically stimulated degradation of crystalline silicon solar cells. / Schmidt, J.; Bothe, K.; Macdonald, D. et al.
in: Materials Research Society Symposium Proceedings, Jahrgang 864, E6.1, 2005, S. 221-232.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Schmidt, J, Bothe, K, Macdonald, D, Adey, J, Jones, R & Palmer, DW 2005, 'Electronically stimulated degradation of crystalline silicon solar cells', Materials Research Society Symposium Proceedings, Jg. 864, E6.1, S. 221-232. https://doi.org/10.1557/proc-864-e6.1
Schmidt, J., Bothe, K., Macdonald, D., Adey, J., Jones, R., & Palmer, D. W. (2005). Electronically stimulated degradation of crystalline silicon solar cells. Materials Research Society Symposium Proceedings, 864, 221-232. Artikel E6.1. https://doi.org/10.1557/proc-864-e6.1
Schmidt J, Bothe K, Macdonald D, Adey J, Jones R, Palmer DW. Electronically stimulated degradation of crystalline silicon solar cells. Materials Research Society Symposium Proceedings. 2005;864:221-232. E6.1. doi: 10.1557/proc-864-e6.1
Schmidt, J. ; Bothe, K. ; Macdonald, D. et al. / Electronically stimulated degradation of crystalline silicon solar cells. in: Materials Research Society Symposium Proceedings. 2005 ; Jahrgang 864. S. 221-232.
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AU - Schmidt, J.

AU - Bothe, K.

AU - Macdonald, D.

AU - Adey, J.

AU - Jones, R.

AU - Palmer, D. W.

PY - 2005

Y1 - 2005

N2 - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

AB - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

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