Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • M. Badylevich
  • S. Shamuilia
  • V. V. Afanas'ev
  • A. Stesmans
  • A. Laha
  • H. J. Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • KU Leuven
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2382-2384
Seitenumfang3
FachzeitschriftMicroelectronic engineering
Jahrgang85
Ausgabenummer12
Frühes Online-Datum12 Sept. 2008
PublikationsstatusVeröffentlicht - Dez. 2008

Abstract

The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.

ASJC Scopus Sachgebiete

Zitieren

Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals. / Badylevich, M.; Shamuilia, S.; Afanas'ev, V. V. et al.
in: Microelectronic engineering, Jahrgang 85, Nr. 12, 12.2008, S. 2382-2384.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Badylevich, M, Shamuilia, S, Afanas'ev, VV, Stesmans, A, Laha, A, Osten, HJ & Fissel, A 2008, 'Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals', Microelectronic engineering, Jg. 85, Nr. 12, S. 2382-2384. https://doi.org/10.1016/j.mee.2008.09.002
Badylevich, M., Shamuilia, S., Afanas'ev, V. V., Stesmans, A., Laha, A., Osten, H. J., & Fissel, A. (2008). Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals. Microelectronic engineering, 85(12), 2382-2384. https://doi.org/10.1016/j.mee.2008.09.002
Badylevich M, Shamuilia S, Afanas'ev VV, Stesmans A, Laha A, Osten HJ et al. Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals. Microelectronic engineering. 2008 Dez;85(12):2382-2384. Epub 2008 Sep 12. doi: 10.1016/j.mee.2008.09.002
Badylevich, M. ; Shamuilia, S. ; Afanas'ev, V. V. et al. / Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals. in: Microelectronic engineering. 2008 ; Jahrgang 85, Nr. 12. S. 2382-2384.
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title = "Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals",
abstract = "The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.",
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T1 - Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

AU - Badylevich, M.

AU - Shamuilia, S.

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Laha, A.

AU - Osten, H. J.

AU - Fissel, A.

N1 - Funding Information: The work done at the KU Leuven was supported by the Fonds voor Wetenschappelijk Onderzoek (FWO) – Vlaanderen through Grant No. 1.5.057.07.

PY - 2008/12

Y1 - 2008/12

N2 - The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.

AB - The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.

KW - Band alignment

KW - Bandgap width

KW - Insulator

KW - Nanocrystals

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SP - 2382

EP - 2384

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JF - Microelectronic engineering

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