Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Raphael M. Tromer
  • A. Freitas
  • Isaac M. Felix
  • Bohayra Mortazavi
  • L. D. MacHado
  • S. Azevedo
  • Luiz Felipe C. Pereira

Organisationseinheiten

Externe Organisationen

  • Universidade Federal do Rio Grande do Norte
  • Universidade Estadual de Campinas
  • Universidade Federal da Paraiba
  • Universidade Federal de Pernambuco
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Details

OriginalspracheEnglisch
Seiten (von - bis)21147-21157
Seitenumfang11
FachzeitschriftPhysical Chemistry Chemical Physics
Jahrgang22
Ausgabenummer37
Frühes Online-Datum7 Sept. 2020
PublikationsstatusVeröffentlicht - 7 Okt. 2020

Abstract

We employ first principles calculations to investigate the electronic, optical, and thermoelectric properties of ten boron-doped nitrogenated holey graphene (NHG) monolayers. We find that most of the proposed structures remain stable during ab initio molecular dynamics simulations, in spite of their increased formation energies. Density functional theory calculations employing a hybrid functional predict band gaps ranging from 0.73 eV to 2.30 eV. In general, we find that boron doping shifts optical absorption towards the visible spectrum, and also reduces light reflection in this region. On the other hand, the magnitude of optical absorption coefficients are reduced. Regarding the thermoelectric properties, we predict that boron doping can enhance the figure of merit ZT of NHG by up to 55%. Our results indicate that boron-doped NHG monolayers may find application in solar cells and thermoelectric devices.

ASJC Scopus Sachgebiete

Zitieren

Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene. / Tromer, Raphael M.; Freitas, A.; Felix, Isaac M. et al.
in: Physical Chemistry Chemical Physics, Jahrgang 22, Nr. 37, 07.10.2020, S. 21147-21157.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Tromer, RM, Freitas, A, Felix, IM, Mortazavi, B, MacHado, LD, Azevedo, S & Pereira, LFC 2020, 'Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene', Physical Chemistry Chemical Physics, Jg. 22, Nr. 37, S. 21147-21157. https://doi.org/10.1039/d0cp02869j
Tromer, R. M., Freitas, A., Felix, I. M., Mortazavi, B., MacHado, L. D., Azevedo, S., & Pereira, L. F. C. (2020). Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene. Physical Chemistry Chemical Physics, 22(37), 21147-21157. https://doi.org/10.1039/d0cp02869j
Tromer RM, Freitas A, Felix IM, Mortazavi B, MacHado LD, Azevedo S et al. Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene. Physical Chemistry Chemical Physics. 2020 Okt 7;22(37):21147-21157. Epub 2020 Sep 7. doi: 10.1039/d0cp02869j
Tromer, Raphael M. ; Freitas, A. ; Felix, Isaac M. et al. / Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene. in: Physical Chemistry Chemical Physics. 2020 ; Jahrgang 22, Nr. 37. S. 21147-21157.
Download
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abstract = "We employ first principles calculations to investigate the electronic, optical, and thermoelectric properties of ten boron-doped nitrogenated holey graphene (NHG) monolayers. We find that most of the proposed structures remain stable during ab initio molecular dynamics simulations, in spite of their increased formation energies. Density functional theory calculations employing a hybrid functional predict band gaps ranging from 0.73 eV to 2.30 eV. In general, we find that boron doping shifts optical absorption towards the visible spectrum, and also reduces light reflection in this region. On the other hand, the magnitude of optical absorption coefficients are reduced. Regarding the thermoelectric properties, we predict that boron doping can enhance the figure of merit ZT of NHG by up to 55%. Our results indicate that boron-doped NHG monolayers may find application in solar cells and thermoelectric devices.",
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AU - Tromer, Raphael M.

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AU - Mortazavi, Bohayra

AU - MacHado, L. D.

AU - Azevedo, S.

AU - Pereira, Luiz Felipe C.

N1 - Funding information: RMT, AF, IMF, LDM and LFCP thank the computational support provided by the High Performance Computing Center at UFRN (NPAD/UFRN). RMT thank the Center for Computational Engineering & Sciences (CCES) at Unicamp for financial support through the FAPESP/CEPID Grant 2013/08293-7. We also acknowledge financial support from Coordenação de Aper-feiçoamento do Pessoal de Nível Superior (CAPES), and Con-selho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) (Grants 309961/2017, 436859/2018).

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Y1 - 2020/10/7

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