Electronic correlation effects in Pb quantum wires on Si(557)

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • M. Quentin
  • T. T. Nhung Nguyen
  • H. Pfnür
  • C. Tegenkamp

Externe Organisationen

  • Technische Universität Chemnitz
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Details

OriginalspracheEnglisch
Aufsatznummer035438
FachzeitschriftPhysical Review B
Jahrgang102
Ausgabenummer3
PublikationsstatusVeröffentlicht - 27 Juli 2020

Abstract

The low-temperature spin-orbit density phase of Pb quantum wires on Si(557) was investigated by scanning tunneling microscopy. High resolution images of this phase allow the proposal of an atomistic model for the densely-packed Pb coverages on the (223) facets. A metal-insulator phase transition was confirmed by local spectroscopy and the BCS-like gap feature of 2Δ≈30meV at 10 K correlates with the transition temperature of Tc=78K seen in surface transport experiments. Moreover, Pb excess coverage adds an extra row of Pb atoms on the mini-(111) terraces. These atoms induce a metallic state located at the step edge at low temperature and quench the charge and spin correlations of the spin-orbit density phase.

ASJC Scopus Sachgebiete

Zitieren

Electronic correlation effects in Pb quantum wires on Si(557). / Quentin, M.; Nguyen, T. T. Nhung; Pfnür, H. et al.
in: Physical Review B, Jahrgang 102, Nr. 3, 035438, 27.07.2020.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Quentin M, Nguyen TTN, Pfnür H, Tegenkamp C. Electronic correlation effects in Pb quantum wires on Si(557). Physical Review B. 2020 Jul 27;102(3):035438. doi: 10.1103/physrevb.102.035438
Quentin, M. ; Nguyen, T. T. Nhung ; Pfnür, H. et al. / Electronic correlation effects in Pb quantum wires on Si(557). in: Physical Review B. 2020 ; Jahrgang 102, Nr. 3.
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N1 - Funding information: The Deutsche Forschungsgemeinschaft (DFG) is gratefully acknowledged. The work was supported via the project Te386/10-2 within the Research Unit FOR1700.

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