Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 253-261 |
| Seitenumfang | 9 |
| Fachzeitschrift | Advances in Solid State Physics |
| Jahrgang | 45 |
| Publikationsstatus | Veröffentlicht - 15 Sept. 2005 |
Abstract
We review recent progress in the understanding of electron spin relaxation mechanisms in zinc-blende semiconductors. Increased spin lifetimes are obtained in structures with special orientation of crystal axes making them suitable for room temperature spintronic devices. In such structures the electron spin lifetime is found to critically depend on spin orientation, which directly affects the design rules for spin devices. We present new calculations concerning the recently introduced intersubband spin relaxation (ISR) mechanism. The mechanism becomes effective at elevated temperatures as scattering between higher electronic subbands starts to occur.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Advances in Solid State Physics, Jahrgang 45, 15.09.2005, S. 253-261.
Publikation: Beitrag in Fachzeitschrift › Übersichtsarbeit › Forschung › Peer-Review
}
TY - JOUR
T1 - Electron spin relaxation in semiconductors
AU - Hägele, Daniel
AU - Döhrmann, Stefanie
AU - Rudolph, Jörg
AU - Oestreich, Michael
PY - 2005/9/15
Y1 - 2005/9/15
N2 - We review recent progress in the understanding of electron spin relaxation mechanisms in zinc-blende semiconductors. Increased spin lifetimes are obtained in structures with special orientation of crystal axes making them suitable for room temperature spintronic devices. In such structures the electron spin lifetime is found to critically depend on spin orientation, which directly affects the design rules for spin devices. We present new calculations concerning the recently introduced intersubband spin relaxation (ISR) mechanism. The mechanism becomes effective at elevated temperatures as scattering between higher electronic subbands starts to occur.
AB - We review recent progress in the understanding of electron spin relaxation mechanisms in zinc-blende semiconductors. Increased spin lifetimes are obtained in structures with special orientation of crystal axes making them suitable for room temperature spintronic devices. In such structures the electron spin lifetime is found to critically depend on spin orientation, which directly affects the design rules for spin devices. We present new calculations concerning the recently introduced intersubband spin relaxation (ISR) mechanism. The mechanism becomes effective at elevated temperatures as scattering between higher electronic subbands starts to occur.
UR - http://www.scopus.com/inward/record.url?scp=34047189774&partnerID=8YFLogxK
U2 - 10.1007/11423256_20
DO - 10.1007/11423256_20
M3 - Review article
AN - SCOPUS:34047189774
VL - 45
SP - 253
EP - 261
JO - Advances in Solid State Physics
JF - Advances in Solid State Physics
SN - 1438-4329
ER -