Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 165301 |
Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
Jahrgang | 86 |
Ausgabenummer | 16 |
Publikationsstatus | Veröffentlicht - 1 Okt. 2012 |
Abstract
We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 86, Nr. 16, 165301, 01.10.2012.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electron spin orientation under in-plane optical excitation in GaAs quantum wells
AU - Pfalz, Stefan
AU - Winkler, Roland
AU - Ubbelohde, Niels
AU - Hägele, Daniel
AU - Oestreich, Michael
PY - 2012/10/1
Y1 - 2012/10/1
N2 - We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.
AB - We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.
UR - http://www.scopus.com/inward/record.url?scp=84867095245&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.86.165301
DO - 10.1103/PhysRevB.86.165301
M3 - Article
AN - SCOPUS:84867095245
VL - 86
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 16
M1 - 165301
ER -