Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 043701 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 104 |
| Ausgabenummer | 4 |
| Frühes Online-Datum | 19 Aug. 2008 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Extern publiziert | Ja |
Abstract
The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p+ regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension of 50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of ∼30 nm) are found within the bulk of the self-assembled line networks.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 104, Nr. 4, 043701, 2008.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p -type silicon surfaces
AU - Bock, Robert
AU - Schmidt, Jan
AU - Brendel, Rolf
AU - Schuhmann, Henning
AU - Seibt, Michael
N1 - Funding Information: Funding was provided by the German State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under Contract No. 0327666.
PY - 2008
Y1 - 2008
N2 - The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p+ regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension of 50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of ∼30 nm) are found within the bulk of the self-assembled line networks.
AB - The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p+ regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension of 50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of ∼30 nm) are found within the bulk of the self-assembled line networks.
UR - http://www.scopus.com/inward/record.url?scp=50849122680&partnerID=8YFLogxK
U2 - 10.1063/1.2963192
DO - 10.1063/1.2963192
M3 - Article
AN - SCOPUS:50849122680
VL - 104
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
M1 - 043701
ER -