Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1600574 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 254 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 11 Dez. 2016 |
Abstract
Recent spin noise spectroscopy measurements showed at low temperatures unexpected large g-factor fluctuations in highly n-doped bulk GaAs which were attributed to intrinsic g-factor fluctuations due to the stochastic nature of the doping distribution. In this publication, we extend these low temperature magnetic field dependent spin noise measurements from 20 up to 260 K. A global fit of all magnetic field and temperature dependent measurements with just three common fit parameters yields good qualitative agreement with the stochastic doping model taking into account the dominating electron momentum scattering by ionized impurities and electron–plasmon scattering which contribute about equally. The magnetic field dependent Larmor precession of the electron spin yields for the studied doping concentration of 8.5 × 1017 cm-3 a reduction of the electron Landé g-factor due to bandgap renormalization of -0.03. However, the analysis also reproduces the previously observed quantitative difference between the measured g-factor fluctuations and predictions by the semiclassical stochastic doping model.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 254, Nr. 5, 1600574, 11.12.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electron g-factor fluctuations in highly n-doped GaAs at high temperatures detected by ultrafast spin noise spectroscopy
AU - Kuhn, Hendrik
AU - Lonnemann, Jan Gerrit
AU - Berski, Fabian
AU - Hübner, Jens
AU - Oestreich, Michael
N1 - Funding Information: We acknowledge the financial support by the BMBF joint research project Q.com-H, the Deutsche Forschungsgemeinschaft (DFG), and the Niedersächsische Technische Hochschule (NTH).
PY - 2016/12/11
Y1 - 2016/12/11
N2 - Recent spin noise spectroscopy measurements showed at low temperatures unexpected large g-factor fluctuations in highly n-doped bulk GaAs which were attributed to intrinsic g-factor fluctuations due to the stochastic nature of the doping distribution. In this publication, we extend these low temperature magnetic field dependent spin noise measurements from 20 up to 260 K. A global fit of all magnetic field and temperature dependent measurements with just three common fit parameters yields good qualitative agreement with the stochastic doping model taking into account the dominating electron momentum scattering by ionized impurities and electron–plasmon scattering which contribute about equally. The magnetic field dependent Larmor precession of the electron spin yields for the studied doping concentration of 8.5 × 1017 cm-3 a reduction of the electron Landé g-factor due to bandgap renormalization of -0.03. However, the analysis also reproduces the previously observed quantitative difference between the measured g-factor fluctuations and predictions by the semiclassical stochastic doping model.
AB - Recent spin noise spectroscopy measurements showed at low temperatures unexpected large g-factor fluctuations in highly n-doped bulk GaAs which were attributed to intrinsic g-factor fluctuations due to the stochastic nature of the doping distribution. In this publication, we extend these low temperature magnetic field dependent spin noise measurements from 20 up to 260 K. A global fit of all magnetic field and temperature dependent measurements with just three common fit parameters yields good qualitative agreement with the stochastic doping model taking into account the dominating electron momentum scattering by ionized impurities and electron–plasmon scattering which contribute about equally. The magnetic field dependent Larmor precession of the electron spin yields for the studied doping concentration of 8.5 × 1017 cm-3 a reduction of the electron Landé g-factor due to bandgap renormalization of -0.03. However, the analysis also reproduces the previously observed quantitative difference between the measured g-factor fluctuations and predictions by the semiclassical stochastic doping model.
KW - bulk-GaAs
KW - G-factor
KW - high n-doping
KW - semiconductors
KW - spin dynamics
KW - spin noise spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85006380974&partnerID=8YFLogxK
U2 - 10.1002/pssb.201600574
DO - 10.1002/pssb.201600574
M3 - Article
AN - SCOPUS:85006380974
VL - 254
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 5
M1 - 1600574
ER -