Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells

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OriginalspracheEnglisch
Aufsatznummer041301
FachzeitschriftPhysical Review B - Condensed Matter and Materials Physics
Jahrgang84
Ausgabenummer4
PublikationsstatusVeröffentlicht - 1 Juli 2011

Abstract

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane electron Landé g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure higher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are very well described within 14×14 band k•p theory and illustrate that the electron spin is an excellent meter variable for mapping out the internal-otherwise hidden-symmetries in two-dimensional systems. Fourth-order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.

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Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. / Hübner, Jens; Kunz, S.; Oertel, S. et al.
in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 84, Nr. 4, 041301, 01.07.2011.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Hübner J, Kunz S, Oertel S, Schuh D, Pochwała M, Duc HT et al. Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics. 2011 Jul 1;84(4):041301. doi: 10.1103/PhysRevB.84.041301
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AU - Hübner, Jens

AU - Kunz, S.

AU - Oertel, S.

AU - Schuh, D.

AU - Pochwała, M.

AU - Duc, H. T.

AU - Förstner, J.

AU - Meier, T.

AU - Oestreich, Michael

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