TY - JOUR

T1 - Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon

AU - Rougieux, F. E.

AU - MacDonald, D.

AU - Cuevas, A.

AU - Ruffell, S.

AU - Schmidt, J.

AU - Lim, B.

AU - Knights, A. P.

N1 - Funding Information: This work was supported by the Australian Research Council (ARC) and by the DAAD/Go8 researcher exchange funding scheme. We are grateful to Kai Petter of Q-cells and Bart Geerligs of ECN for kindly supplying the wafers used in this study. Thanks are also due to Chris Samundsett for assisting with sample preparation and to Martin Wolf for helping with the ECV measurements. Table I. Measured and modeled (Klaassen) minority and majority carrier mobility in compensated and noncompensated silicon. ρ ( Ω   cm ) Concentration ( cm − 3 ) Measured mobility ( cm 2   V − 1   s − 1 ) Klaassen mobility ( cm 2   V − 1   s − 1 ) Majority Minority Majority Minority N A N D p 0 Hall Conductivity p -type control 4.70 2.10 × 10 15 ⋯ 2.10 × 10 15 316 ⋯ ⋯ 456 1283 1.28 1.15 × 10 16 ⋯ 1.15 × 10 16 281 435 ± 13 1120 ± 100 425 1082 0.48 3.50 × 10 16 ⋯ 3.50 × 10 16 246 372 ± 11 765 ± 80 382 878 p -type compensated 1.14 4.00 × 10 16 2.5 × 10 16 1.50 × 10 16 244 365 ± 11 660 ± 57 358 838 0.53 8.10 × 10 16 4.05 × 10 16 4.05 × 10 16 218 291 ± 9 476 ± 87 315 684 FIG. 1. Plot of 1 / τ vs ( π / W ) 2 to determine the minority carrier mobility. The error in the mobility is determined using the best fit within the error bars. FIG. 2. Majority conductivity hole mobility in compensated and noncompensated p -type silicon vs acceptor concentration for different donor concentrations. FIG. 3. Minority electron mobility in compensated and noncompensated p -type silicon vs acceptor concentration for different donor concentrations. FIG. 4. Measured Hall factor in noncompensated and compensated silicon compared to noncompensated Hall factors from the literature. The straight line represents the average value of 0.71 for the Hall factor in compensated silicon.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - The conductivity mobility for majority carrier holes in compensated p -type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the minority electron mobility. The Hall factor, which relates the Hall mobility to the conductivity mobility, has also been determined using the Hall method combined with the capacitance-voltage measurements. Our results indicate a similar Hall factor in both compensated and noncompensated samples.

AB - The conductivity mobility for majority carrier holes in compensated p -type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the minority electron mobility. The Hall factor, which relates the Hall mobility to the conductivity mobility, has also been determined using the Hall method combined with the capacitance-voltage measurements. Our results indicate a similar Hall factor in both compensated and noncompensated samples.

UR - http://www.scopus.com/inward/record.url?scp=77955223091&partnerID=8YFLogxK

U2 - 10.1063/1.3456076

DO - 10.1063/1.3456076

M3 - Article

AN - SCOPUS:77955223091

VL - 108

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

IS - 1

M1 - 013706

ER -