Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011 |
| Seiten | 1444-1451 |
| Seitenumfang | 8 |
| Publikationsstatus | Veröffentlicht - 2011 |
| Veranstaltung | 2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, USA / Vereinigte Staaten Dauer: 31 Mai 2011 → 3 Juni 2011 |
Publikationsreihe
| Name | Proceedings - Electronic Components and Technology Conference |
|---|---|
| ISSN (Print) | 0569-5503 |
Abstract
Following the "More-than-Moore's" law, mobile electronic devices have to offer several functions without taking up too much room or consuming too much power. To address these requirements Chip-on-Chip (CoC) structures have been developed as a high performance solution for threedimensional packaging. One basic part of such CoC structures are micro bump arrays, they become necessary to connect the I/O (in/out) contacts of the ICs. Connecting thousand of I/O contacts on an area of a few square centimeters, the diameter of a single micro bump is smaller than 25μm. The combination of low melting materials and high current densities, caused by small contact surfaces, leads to a strong influence of electro- and thermomigration on the aging process of the micro bump array. Simulations were performed to determine the migration induced material transport and the resulting mass flux divergences in FEM models of 10μm micro bumps. The simulation results for several solder materials including SnAgCu (SAC) solder, nickel, silver and gold were compared to each other. Based on the results the geometry of the contacts has been varied to reduce the effect of current crowding with the effect of smaller mass flux divergences in consequence of electromigration. Furthermore the pitch between the bumps was varied. The expected lifetime of the micro bumps was compared with conventional SAC bumps for PSvfBGAs (Package Stackable Very thin Fine Pitch Ball Grid Arrays). For the conventional BGA bump a diameter of 280μm was chosen.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011. 2011. S. 1444-1451 5898701 (Proceedings - Electronic Components and Technology Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Electro- and thermomigration in micro bump interconnects for 3D integration
AU - Meinshausen, L.
AU - Weide-Zaage, K.
AU - Petzold, M.
N1 - Copyright: Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - Following the "More-than-Moore's" law, mobile electronic devices have to offer several functions without taking up too much room or consuming too much power. To address these requirements Chip-on-Chip (CoC) structures have been developed as a high performance solution for threedimensional packaging. One basic part of such CoC structures are micro bump arrays, they become necessary to connect the I/O (in/out) contacts of the ICs. Connecting thousand of I/O contacts on an area of a few square centimeters, the diameter of a single micro bump is smaller than 25μm. The combination of low melting materials and high current densities, caused by small contact surfaces, leads to a strong influence of electro- and thermomigration on the aging process of the micro bump array. Simulations were performed to determine the migration induced material transport and the resulting mass flux divergences in FEM models of 10μm micro bumps. The simulation results for several solder materials including SnAgCu (SAC) solder, nickel, silver and gold were compared to each other. Based on the results the geometry of the contacts has been varied to reduce the effect of current crowding with the effect of smaller mass flux divergences in consequence of electromigration. Furthermore the pitch between the bumps was varied. The expected lifetime of the micro bumps was compared with conventional SAC bumps for PSvfBGAs (Package Stackable Very thin Fine Pitch Ball Grid Arrays). For the conventional BGA bump a diameter of 280μm was chosen.
AB - Following the "More-than-Moore's" law, mobile electronic devices have to offer several functions without taking up too much room or consuming too much power. To address these requirements Chip-on-Chip (CoC) structures have been developed as a high performance solution for threedimensional packaging. One basic part of such CoC structures are micro bump arrays, they become necessary to connect the I/O (in/out) contacts of the ICs. Connecting thousand of I/O contacts on an area of a few square centimeters, the diameter of a single micro bump is smaller than 25μm. The combination of low melting materials and high current densities, caused by small contact surfaces, leads to a strong influence of electro- and thermomigration on the aging process of the micro bump array. Simulations were performed to determine the migration induced material transport and the resulting mass flux divergences in FEM models of 10μm micro bumps. The simulation results for several solder materials including SnAgCu (SAC) solder, nickel, silver and gold were compared to each other. Based on the results the geometry of the contacts has been varied to reduce the effect of current crowding with the effect of smaller mass flux divergences in consequence of electromigration. Furthermore the pitch between the bumps was varied. The expected lifetime of the micro bumps was compared with conventional SAC bumps for PSvfBGAs (Package Stackable Very thin Fine Pitch Ball Grid Arrays). For the conventional BGA bump a diameter of 280μm was chosen.
UR - http://www.scopus.com/inward/record.url?scp=79960411498&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2011.5898701
DO - 10.1109/ECTC.2011.5898701
M3 - Conference contribution
AN - SCOPUS:79960411498
SN - 9781612844978
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1444
EP - 1451
BT - 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011
T2 - 2011 61st Electronic Components and Technology Conference, ECTC 2011
Y2 - 31 May 2011 through 3 June 2011
ER -