Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1618-1621 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical review letters |
| Jahrgang | 67 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1991 |
| Extern publiziert | Ja |
Abstract
The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Physical review letters, Jahrgang 67, Nr. 12, 01.01.1991, S. 1618-1621.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electric-field domains in semiconductor superlattices
T2 - A novel system for tunneling between 2D systems
AU - Grahn, H. T.
AU - Haug, R. J.
AU - Müller, W.
AU - Ploog, K.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.
AB - The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.
UR - http://www.scopus.com/inward/record.url?scp=3242883225&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.67.1618
DO - 10.1103/PhysRevLett.67.1618
M3 - Article
AN - SCOPUS:3242883225
VL - 67
SP - 1618
EP - 1621
JO - Physical review letters
JF - Physical review letters
SN - 0031-9007
IS - 12
ER -