Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Veranstaltung | 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009 - Delft, Niederlande Dauer: 26 Apr. 2009 → 29 Apr. 2009 |
Publikationsreihe
| Name | 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009 |
|---|
Abstract
The migration issue of Package-on-Package (PoP) is investigated in this article. The migration phenomenon can be amplified as the density of solder bumps increases, while the paths are very finer as well in PoP. These migration effects were first evaluated by three dimensional finite element simulations in ANSYS in a previous article [1], in which the bottom of the bump was found out to be the weakest part of the structure in the electrical, thermal and stress fields driven by current loads in the PoP assemblies. To verify this conclusion, the experiments were performed in the assembly cards for analyzing migration effects in PoP. "Top", ́bottoḿ and PoP components were assembled on test cards. Daisy chained bumps were chosen to investigate the migration phenomenon by comparing the behaviors between the single package ("top" and "bottom") and PoP. The test assembly cards were placed into a temperature-controlled chamber with one ampere current stressing the components. This experiment was performed at different temperatures. In conclusion, the migration problem of PoP was studied by experiments, and new simulations were also carried out. The IMCs were analyzed for understanding the migration phenomenon. The comparison of the simulation and experimental results indicates high electromigration mass flux divergences at the position of the open circuit.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Theoretische Informatik und Mathematik
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
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- BibTex
- RIS
2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009. 2009. 4938457 (2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Electrically driven matter transport effects in PoP interconnections
AU - Feng, W.
AU - Weide-Zaage, K.
AU - Verdier, F.
AU - Plano, B.
AU - Guédon-Gracia, A.
AU - Frémont, H.
N1 - Copyright: Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - The migration issue of Package-on-Package (PoP) is investigated in this article. The migration phenomenon can be amplified as the density of solder bumps increases, while the paths are very finer as well in PoP. These migration effects were first evaluated by three dimensional finite element simulations in ANSYS in a previous article [1], in which the bottom of the bump was found out to be the weakest part of the structure in the electrical, thermal and stress fields driven by current loads in the PoP assemblies. To verify this conclusion, the experiments were performed in the assembly cards for analyzing migration effects in PoP. "Top", ́bottoḿ and PoP components were assembled on test cards. Daisy chained bumps were chosen to investigate the migration phenomenon by comparing the behaviors between the single package ("top" and "bottom") and PoP. The test assembly cards were placed into a temperature-controlled chamber with one ampere current stressing the components. This experiment was performed at different temperatures. In conclusion, the migration problem of PoP was studied by experiments, and new simulations were also carried out. The IMCs were analyzed for understanding the migration phenomenon. The comparison of the simulation and experimental results indicates high electromigration mass flux divergences at the position of the open circuit.
AB - The migration issue of Package-on-Package (PoP) is investigated in this article. The migration phenomenon can be amplified as the density of solder bumps increases, while the paths are very finer as well in PoP. These migration effects were first evaluated by three dimensional finite element simulations in ANSYS in a previous article [1], in which the bottom of the bump was found out to be the weakest part of the structure in the electrical, thermal and stress fields driven by current loads in the PoP assemblies. To verify this conclusion, the experiments were performed in the assembly cards for analyzing migration effects in PoP. "Top", ́bottoḿ and PoP components were assembled on test cards. Daisy chained bumps were chosen to investigate the migration phenomenon by comparing the behaviors between the single package ("top" and "bottom") and PoP. The test assembly cards were placed into a temperature-controlled chamber with one ampere current stressing the components. This experiment was performed at different temperatures. In conclusion, the migration problem of PoP was studied by experiments, and new simulations were also carried out. The IMCs were analyzed for understanding the migration phenomenon. The comparison of the simulation and experimental results indicates high electromigration mass flux divergences at the position of the open circuit.
UR - http://www.scopus.com/inward/record.url?scp=67650646196&partnerID=8YFLogxK
U2 - 10.1109/ESIME.2009.4938457
DO - 10.1109/ESIME.2009.4938457
M3 - Conference contribution
AN - SCOPUS:67650646196
SN - 9781424441617
T3 - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
BT - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
T2 - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
Y2 - 26 April 2009 through 29 April 2009
ER -