Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings |
| Untertitel | ICSICT 2008 |
| Seiten | 1276-1279 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Veranstaltung | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Dauer: 20 Okt. 2008 → 23 Okt. 2008 |
Publikationsreihe
| Name | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT |
|---|
Abstract
Capacitor composed of single crystalline Gd203 on Si(100) with Pt top electrode was fabricated by Molecular Beam Epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd203 is pinned at 4.75 eV and due to the lattice mismatch between Gd203, the interface state density is in the level of 1013 extracted by Terman and conductance methods.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
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2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings: ICSICT 2008. 2008. S. 1276-1279 4734784 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Electrical Characterization of Ultrathin Single Crystalline Gd20 3/Si(100) with Pt Top Electrode
AU - Sun, Qing Qing
AU - Laha, Apurba
AU - Osten, H. Jörg
AU - Ding, Shi Jin
AU - Zhang, David Wei
AU - Fissel, A.
N1 - Acknowledgements This work is supported by National Natural Science Foundation ofChina (60628403, 60776017), and SRFDP (20060246032). The authors would also like to acknowledge CSC-DAAD PPP project for assigning a scholarship.
PY - 2008
Y1 - 2008
N2 - Capacitor composed of single crystalline Gd203 on Si(100) with Pt top electrode was fabricated by Molecular Beam Epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd203 is pinned at 4.75 eV and due to the lattice mismatch between Gd203, the interface state density is in the level of 1013 extracted by Terman and conductance methods.
AB - Capacitor composed of single crystalline Gd203 on Si(100) with Pt top electrode was fabricated by Molecular Beam Epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd203 is pinned at 4.75 eV and due to the lattice mismatch between Gd203, the interface state density is in the level of 1013 extracted by Terman and conductance methods.
UR - http://www.scopus.com/inward/record.url?scp=60749087694&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734784
DO - 10.1109/ICSICT.2008.4734784
M3 - Conference contribution
AN - SCOPUS:60749087694
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 1276
EP - 1279
BT - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -