Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6970768 |
| Seiten (von - bis) | 166-173 |
| Seitenumfang | 8 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 5 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 2015 |
Abstract
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 5, Nr. 1, 6970768, 01.01.2015, S. 166-173.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters
AU - Krugener, Jan
AU - Peibst, Robby
AU - Alexander, Wolf
AU - Bugiel, Eberhard
AU - Ohrdes, Tobias
AU - Kiefer, Fabian
AU - Schollhorn, Claus
AU - Grohe, Andreas
AU - Brendel, Rolf
AU - Osten, Hans-Jörg
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
KW - Boron
KW - crystal defects
KW - ion implantation
KW - photovoltaic
KW - rapid thermal annealing (RTA)
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84919832526&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2014.2365468
DO - 10.1109/jphotov.2014.2365468
M3 - Article
AN - SCOPUS:84919832526
VL - 5
SP - 166
EP - 173
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6970768
ER -