Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 1998 Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Seiten | 521-524 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 1998 |
| Extern publiziert | Ja |
| Veranstaltung | 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan Dauer: 11 Mai 1998 → 15 Mai 1998 |
Publikationsreihe
| Name | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
|---|---|
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISSN (Print) | 1092-8669 |
Abstract
Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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1998 Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1998. S. 521-524 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Efficiency of photoluminescence up-conversion at (Al0.5Ga0.5)0.5In0.5P and GaAs heterointerface
AU - Yamashita, Kenichi
AU - Kita, Takashi
AU - Nishino, Taneo
AU - Oestreich, Michael
PY - 1998
Y1 - 1998
N2 - Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
AB - Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
UR - http://www.scopus.com/inward/record.url?scp=0032288096&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0032288096
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 521
EP - 524
BT - 1998 Conference Proceedings - International Conference on Indium Phosphide and Related Materials
T2 - 1998 International Conference on Indium Phosphide and Related Materials
Y2 - 11 May 1998 through 15 May 1998
ER -