Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1750-1753 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Jahrgang | 16 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1998 |
| Extern publiziert | Ja |
Abstract
We show that the incorporation of low carbon concentration (< 1020 cm-3) within the SiGe region of SiGe heterobipolar transistors (HBT) can significantly suppress boron outdiffusion caused by later processing steps. We were able to obtain fT/fmax ≥ 50 GHz for a simple SiGe:C transistor with a box-shaped Ge profile. Comparing the high frequency performance of molecular beam epitaxy grown SiGe:C HBTs with identical SiGe HBTs, we found an increase in fT and fmax by a factor of more than 2. The static characteristics for SiGe:C HBTs demonstrate that the transistors should be suitable for circuit applications. Process margins for SiGe HBT technology are shown to be relaxed due to C incorporation. The dramatic reduction of B diffusion in C-rich Si under conditions of point defect equilibrium is attributed to a reduction of the concentration of interstitials available for the B diffusion.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 16, Nr. 3, 01.05.1998, S. 1750-1753.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Effects of carbon on boron diffusion in SiGe
T2 - Principles and impact on bipolar devices
AU - Osten, H. J.
AU - Heinemann, B.
AU - Knoll, D.
AU - Lippert, G.
AU - Rücker, H.
PY - 1998/5/1
Y1 - 1998/5/1
N2 - We show that the incorporation of low carbon concentration (< 1020 cm-3) within the SiGe region of SiGe heterobipolar transistors (HBT) can significantly suppress boron outdiffusion caused by later processing steps. We were able to obtain fT/fmax ≥ 50 GHz for a simple SiGe:C transistor with a box-shaped Ge profile. Comparing the high frequency performance of molecular beam epitaxy grown SiGe:C HBTs with identical SiGe HBTs, we found an increase in fT and fmax by a factor of more than 2. The static characteristics for SiGe:C HBTs demonstrate that the transistors should be suitable for circuit applications. Process margins for SiGe HBT technology are shown to be relaxed due to C incorporation. The dramatic reduction of B diffusion in C-rich Si under conditions of point defect equilibrium is attributed to a reduction of the concentration of interstitials available for the B diffusion.
AB - We show that the incorporation of low carbon concentration (< 1020 cm-3) within the SiGe region of SiGe heterobipolar transistors (HBT) can significantly suppress boron outdiffusion caused by later processing steps. We were able to obtain fT/fmax ≥ 50 GHz for a simple SiGe:C transistor with a box-shaped Ge profile. Comparing the high frequency performance of molecular beam epitaxy grown SiGe:C HBTs with identical SiGe HBTs, we found an increase in fT and fmax by a factor of more than 2. The static characteristics for SiGe:C HBTs demonstrate that the transistors should be suitable for circuit applications. Process margins for SiGe HBT technology are shown to be relaxed due to C incorporation. The dramatic reduction of B diffusion in C-rich Si under conditions of point defect equilibrium is attributed to a reduction of the concentration of interstitials available for the B diffusion.
UR - http://www.scopus.com/inward/record.url?scp=0001535455&partnerID=8YFLogxK
U2 - 10.1116/1.590048
DO - 10.1116/1.590048
M3 - Article
AN - SCOPUS:0001535455
VL - 16
SP - 1750
EP - 1753
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 3
ER -