Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100)

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Qing Qing Sun
  • Apurba Laha
  • Shi Jin Ding
  • David Wei Zhang
  • H. Jörg Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • Fudan University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer152908
FachzeitschriftApplied physics letters
Jahrgang92
Ausgabenummer15
PublikationsstatusVeröffentlicht - 18 Apr. 2008

Abstract

The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

ASJC Scopus Sachgebiete

Zitieren

Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). / Sun, Qing Qing; Laha, Apurba; Ding, Shi Jin et al.
in: Applied physics letters, Jahrgang 92, Nr. 15, 152908, 18.04.2008.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Sun, Q. Q., Laha, A., Ding, S. J., Zhang, D. W., Osten, H. J., & Fissel, A. (2008). Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). Applied physics letters, 92(15), Artikel 152908. https://doi.org/10.1063/1.2912523
Sun QQ, Laha A, Ding SJ, Zhang DW, Osten HJ, Fissel A. Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). Applied physics letters. 2008 Apr 18;92(15):152908. doi: 10.1063/1.2912523
Sun, Qing Qing ; Laha, Apurba ; Ding, Shi Jin et al. / Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). in: Applied physics letters. 2008 ; Jahrgang 92, Nr. 15.
Download
@article{4cc58c1f3b1847868277d1dae0f0bf55,
title = "Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100)",
abstract = "The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.",
author = "Sun, {Qing Qing} and Apurba Laha and Ding, {Shi Jin} and Zhang, {David Wei} and Osten, {H. J{\"o}rg} and A. Fissel",
note = "Funding Information: This work is supported by the NSFC (60628403, 60776017), 863 (2006AA03Z307), and CSC-DAAD PPP projects.",
year = "2008",
month = apr,
day = "18",
doi = "10.1063/1.2912523",
language = "English",
volume = "92",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "15",

}

Download

TY - JOUR

T1 - Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100)

AU - Sun, Qing Qing

AU - Laha, Apurba

AU - Ding, Shi Jin

AU - Zhang, David Wei

AU - Osten, H. Jörg

AU - Fissel, A.

N1 - Funding Information: This work is supported by the NSFC (60628403, 60776017), 863 (2006AA03Z307), and CSC-DAAD PPP projects.

PY - 2008/4/18

Y1 - 2008/4/18

N2 - The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

AB - The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=42349104150&partnerID=8YFLogxK

U2 - 10.1063/1.2912523

DO - 10.1063/1.2912523

M3 - Article

AN - SCOPUS:42349104150

VL - 92

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 15

M1 - 152908

ER -