Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 202902 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 102 |
| Ausgabenummer | 20 |
| Publikationsstatus | Veröffentlicht - 20 Mai 2013 |
Abstract
Present work addresses the issue of flat band voltage instability engendered by the presence of large number of fixed charges and interface traps at and close to the interface of metal oxide semiconductor capacitors. We show that submonolayer of C incorporation onto Si surface prior to epitaxial lanthanide oxides (Ln2O3: Gd2O3, Nd2O3) deposition can significantly improve their electrical properties. Ultraviolet photoelectric spectroscopy shows that most of the intrinsic surface states that stem from the dangling bonds on Si surface disappear after passivation with C. The flat band voltage of Pt/Gd 2O3/Si MOS capacitors can be tuned in a controlled manner by systematic incorporation of C onto Si surface, effectively at Gd 2O3-Si interface.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 102, Nr. 20, 202902, 20.05.2013.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon
AU - Laha, Apurba
AU - Fissel, A.
AU - Osten, H. J.
PY - 2013/5/20
Y1 - 2013/5/20
N2 - Present work addresses the issue of flat band voltage instability engendered by the presence of large number of fixed charges and interface traps at and close to the interface of metal oxide semiconductor capacitors. We show that submonolayer of C incorporation onto Si surface prior to epitaxial lanthanide oxides (Ln2O3: Gd2O3, Nd2O3) deposition can significantly improve their electrical properties. Ultraviolet photoelectric spectroscopy shows that most of the intrinsic surface states that stem from the dangling bonds on Si surface disappear after passivation with C. The flat band voltage of Pt/Gd 2O3/Si MOS capacitors can be tuned in a controlled manner by systematic incorporation of C onto Si surface, effectively at Gd 2O3-Si interface.
AB - Present work addresses the issue of flat band voltage instability engendered by the presence of large number of fixed charges and interface traps at and close to the interface of metal oxide semiconductor capacitors. We show that submonolayer of C incorporation onto Si surface prior to epitaxial lanthanide oxides (Ln2O3: Gd2O3, Nd2O3) deposition can significantly improve their electrical properties. Ultraviolet photoelectric spectroscopy shows that most of the intrinsic surface states that stem from the dangling bonds on Si surface disappear after passivation with C. The flat band voltage of Pt/Gd 2O3/Si MOS capacitors can be tuned in a controlled manner by systematic incorporation of C onto Si surface, effectively at Gd 2O3-Si interface.
UR - http://www.scopus.com/inward/record.url?scp=84878345917&partnerID=8YFLogxK
U2 - 10.1063/1.4807588
DO - 10.1063/1.4807588
M3 - Article
AN - SCOPUS:84878345917
VL - 102
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 20
M1 - 202902
ER -