Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 1173-1178 |
| Seitenumfang | 6 |
| ISBN (elektronisch) | 9781509027248 |
| Publikationsstatus | Veröffentlicht - 18 Nov. 2016 |
| Veranstaltung | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, USA / Vereinigte Staaten Dauer: 5 Juni 2016 → 10 Juni 2016 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| Band | 2016-November |
| ISSN (Print) | 0160-8371 |
Abstract
We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. S. 1173-1178 7749799 (Conference Record of the IEEE Photovoltaic Specialists Conference; Band 2016-November).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces
AU - Veith-Wolf, Boris
AU - Witteck, Robert
AU - Morlier, Arnaud
AU - Schulte-Huxel, Henning
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.
AB - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.
KW - Aluminum oxide
KW - carrier lifetime
KW - crystalline silicon
KW - degradation
KW - silicon nitride
KW - surface passivation
KW - UV stability
UR - http://www.scopus.com/inward/record.url?scp=85003671230&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2016.7749799
DO - 10.1109/pvsc.2016.7749799
M3 - Conference contribution
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1173
EP - 1178
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -